SST423NL Vishay, SST423NL Datasheet

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SST423NL

Manufacturer Part Number
SST423NL
Description
Manufacturer
Vishay
Datasheet

Specifications of SST423NL

Channel Type
N
Configuration
Dual
Gate-source Voltage (max)
-40V
Drain-gate Voltage (max)
-40V
Operating Temperature (min)
-55C
Operating Temperature (max)
150C
Operating Temperature Classification
Military
Mounting
Surface Mount
Lead Free Status / Rohs Status
Not Compliant
DESCRIPTION
The SST421NL/423NL are monolithic dual n-channel JFETs
designed to provide very high input impedance for differential
amplification and impedance matching. Among its many
unique features, this series offers low operating gate current.
Pins 4 and 8 on SST421NL/423NL part numbers enable the
substrate to be connected to a positive polarity, external bias
(V
ABSOLUTE MAXIMUM RATINGS
Gate-Drain, Gate-Source Voltage
Gate-Gate Voltage
Gate Current
Lead Temperature (
Storage Temperature
Operating Junction Temperature
Document Number: 72060
S-40391—Rev. B, 15-Mar-04
PRODUCT SUMMARY
FEATURES
D Anti Latchup Capability
D Monolithic Design
D High Slew Rate
D Low Offset/Drift Voltage
D Low Gate Leakage: 0.6 pA
D Low Noise
D High CMRR: 102 dB
Part Number
DD
SST421NL
SST423NL
) to avoid latchup.
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
1
/
16
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
V
” from case for 10 sec.)
GS(off)
−0.4 to −2
−0.4 to−2
. . . . . . . . . . . . . . . . . . . . . . . . . .
(V)
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Monolithic N-Channel JFET Duals
V
(BR)GSS
. . . . . . . . . . . . . . . . . .
SUBSTRATE
BENEFITS
D External Substrate Bias—Avoids Latchup
D Tight Differential Match vs. Current
D Improved Op Amp Speed, Settling Time Accuracy
D Minimum Input Error/Trimming Requirement
D Insignificant Signal Loss/Error Voltage
D High System Sensitivity
D Minimum Error with Large Input Signals
−40
−40
Min (V)
G
S
D
1
1
1
−65 to 200_C
−55 to 150_C
1
2
3
4
Narrow Body SOIC
g
SST423NL − (423NL)
fs
SST421NL − (421NL)
300 _C
"40 V
10 mA
−40 V
Marking Codes:
Min (mS)
0.3
0.3
Top View
The SO-8 package provides ease of manufacturing, and the
symmetrical pinout prevents improper orientation. The SO-8
package
compatibility with automatic assembly methods.
Similar versions of these part numbers are available in the
hermetically sealed TO-78 package. Full military processing
is available. See data sheets for part numbers U421/423.
Power Dissipation :
Notes
a.
b.
jV
8
7
6
5
GS1
Derate 2.4 mW/_C above 25_C
Derate 4 mW/_C above 25_C
SUBSTRATE
G
D
S
− V
2
2
2
GS2
is available with tape-and-reel options for
10
25
j Max (mV)
Per Side
Total
b
SST421NL/423NL
APPLICATIONS
D Ultralow Input Current
D High-Speed Comparators
D Impedance Converters
. . . . . . . . . . . . . . . . . . . . . . . . . . .
a
Differential Amps
. . . . . . . . . . . . . . . . . . . . . . . .
Vishay Siliconix
www.vishay.com
300 mW
500 mW
1

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SST423NL Summary of contents

Page 1

... Top View Marking Codes: SST421NL − (421NL) SST423NL − (423NL) −40 V Power Dissipation : " Notes 300 _C a. Derate 2.4 mW/_C above 25_C −65 to 200_C b. Derate 4 mW/_C above 25_C −55 to 150_C SST421NL/423NL Vishay Siliconix j Max (mV) GS2 10 25 APPLICATIONS D Ultralow Input Current Differential Amps ...

Page 2

... kHz 0 kHz = kHz 0.4 1 MHz −55 to 125_C 102 DG D Limits SST421NL SST423NL Unit Min Max Min Max a −40 −40 "40 "40 V −0.4 −2 −0.4 −2 60 1000 60 1000 mA −50 −50 pA −50 − −1.8 −1.8 V 0.3 1.5 0.3 1 0.12 0.35 0.12 0. 1.5 1.5 nV⁄ ...

Page 3

... V −0.3 V 0.4 −0.4 V −0.5 V −0.6 V 0.2 −0 0.5 −0.1 V 0.4 −0.2 V 0.3 −0.3 V −0.4 V 0.2 −0.5 V 0.1 −0.6 V −0.7 V 0.8 1 SST421NL/423NL Vishay Siliconix Gate Leakage Current T = 125_C 100 25_C 25_C GSS − Drain-Gate Voltage (V) DG Output Characteristics −1.5 V GS(off) ...

Page 4

... SST421NL/423NL Vishay Siliconix TYPICAL CHARACTERISTICS (T Transfer Characteristics 0 −1 V GS(off −55_C A 0.4 25_C 0.3 0.2 125_C 0 −0.2 −0.4 −0.6 V − Gate-Source Voltage (V) GS Voltage Differential with Temperature vs. Drain Current 100 125_C −55 to 25_C 100 I − Drain Current (mA) D Circuit Voltage Gain vs. Drain Current ...

Page 5

... MHz 0.8 0.6 0.4 0.2 0 −16 − kHz 1000 kHz 1000 SST421NL/423NL Vishay Siliconix Common-Source Reverse Feedback Capacitance vs. Gate-Source Voltage MHz −4 −8 −12 −16 V − Gate-Source Voltage (V) GS Equivalent Input Noise Voltage vs. Frequency 100 100 − Frequency (Hz) On-Resistance and Output Conductance vs ...

Page 6

... Vishay disclaims any and all liability arising out of the use or application of any product described herein or of any information provided herein to the maximum extent permitted by law. The product specifications do not expand or otherwise modify Vishay’ ...

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