2SJ144Y(TE85R,F) Toshiba, 2SJ144Y(TE85R,F) Datasheet
2SJ144Y(TE85R,F)
Manufacturer Part Number
2SJ144Y(TE85R,F)
Description
Manufacturer
Toshiba
Datasheet
1.2SJ144YTE85RF.pdf
(4 pages)
Specifications of 2SJ144Y(TE85R,F)
Lead Free Status / Rohs Status
Compliant
Audio Frequency Amplifier Applications
Analog Switch Applications
Constant Current Applications
Impedance Converter Applications
•
•
•
•
Absolute Maximum Ratings
Electrical Characteristics
Marking
High breakdown voltage: V
High input impedance: I
Low R
Small package
Gate-drain voltage
Gate current
Drain power dissipation
Junction temperature
Storage temperature range
Note:
Gate cut-off current
Gate-drain breakdown voltage
Drain current
Gate-source cut-off voltage
Forward transfer admittance
Drain-source on resistance
Input capacitance
Reverse transfer capacitance
Note: I
DS (ON)
DSS
Using continuously under heavy loads (e.g. the application of
high temperature/current/voltage and the significant change in
temperature, etc.) may cause this product to decrease in the
reliability significantly even if the operating conditions (i.e.
operating temperature/current/voltage, etc.) are within the
absolute maximum ratings.
Please design the appropriate reliability upon reviewing the
Toshiba Semiconductor Reliability Handbook (“Handling
Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test report and
estimated failure rate, etc).
Characteristics
Characteristics
classification Y: −1.2~−3.0 mA, GR (G): −2.6~−6.5 mA, BL (L): −6~−14 mA
: R
DS (ON)
TOSHIBA Field Effect Transistor Silicon P Channel Junction Type
GSS
= 270 Ω (typ.) (I
GDS
= 1.0 nA (max) (V
(Ta = 25°C)
= 50 V (min)
(Ta = 25°C)
V
V
R
Symbol
Symbol
GS (OFF)
(BR) GDS
V
DS (ON)
⎪Y
I
I
C
T
C
GSS
DSS
P
GDS
I
T
stg
rss
G
iss
fs
D
j
(Note)
DSS
⎪
2SJ144
= −5 mA)
GS
V
V
V
V
V
V
I
V
V
DSS
GS
DS
DS
DS
DS
DS
DS
DG
= 30 V)
−55~125
Rating
= 0, I
= −10 V, V
= −10 V, I
= −10 V, V
= −10 mV, V
= −10 V, V
= 30 V, V
= −10 V, I
= −5 mA
−10
100
125
50
1
G
= 100 μA
Test Condition
DS
D
D
GS
GS
GS
= −0.1 μA
= 0, f = 1 MHz
GS
= 0
= 0
= 0, f = 1 kHz
= 0, f = 1 MHz
Unit
mW
mA
= 0
°C
°C
V
Weight: 6 mg (typ.)
JEDEC
JEITA
TOSHIBA
−1.2
Min
0.3
1.0
50
⎯
⎯
⎯
⎯
Typ.
270
4.0
3.6
18
⎯
⎯
⎯
⎯
2-2E1B
SC-70
2007-11-01
―
Max
−14
1.0
6.0
⎯
⎯
⎯
⎯
⎯
2SJ144
Unit: mm
Unit
mA
mS
nA
pF
pF
Ω
V
V
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2SJ144Y(TE85R,F) Summary of contents
Page 1
... TOSHIBA Field Effect Transistor Silicon P Channel Junction Type Audio Frequency Amplifier Applications Analog Switch Applications Constant Current Applications Impedance Converter Applications • High breakdown voltage: V GDS • High input impedance 1.0 nA (max) (V GSS • Low 270 Ω (typ (ON) DS (ON) • Small package ...
Page 2
2 2SJ144 2007-11-01 ...
Page 3
3 2SJ144 2007-11-01 ...
Page 4
... Product shall not be used for or incorporated into any products or systems whose manufacture, use, or sale is prohibited under any applicable laws or regulations. • The information contained herein is presented only as guidance for Product use. No responsibility is assumed by TOSHIBA for any infringement of patents or any other intellectual property rights of third parties that may result from the use of Product. No license to any intellectual property right is granted by this document, whether express or implied, by estoppel or otherwise. • ...