3N259-E4/72 Vishay, 3N259-E4/72 Datasheet - Page 3
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3N259-E4/72
Manufacturer Part Number
3N259-E4/72
Description
Manufacturer
Vishay
Datasheet
1.3N259-E472.pdf
(4 pages)
Specifications of 3N259-E4/72
Phase Type
Single Phase
Number Of Elements
1
Peak Rep Rev Volt
1kV
Rms Voltage (max)
700V
Peak Non-repetitive Surge Current (max)
60A
Avg. Forward Curr (max)
2@Ta=55CA
Rev Curr
5uA
Forward Voltage
1.1V
Package Type
Case KBPM
Operating Temp Range
-55C to 165C
Pin Count
4
Mounting
Through Hole
Operating Temperature Classification
Military
Lead Free Status / Rohs Status
Compliant
PACKAGE OUTLINE DIMENSIONS in inches (millimeters)
Document Number: 88532
Revision: 15-Apr-08
Figure 4. Typical Reverse Leakage Characteristics Per Diode
0.01
0.01
100
100
0.1
0.1
10
Figure 3. Typical Forward Characteristics Per Diode
10
1
1
0
0
Percent of Rated Peak Reverse Voltage (%)
0.2
Instantaneous Forward Voltage (V)
20
0.4
40
0.6
PDD-Americas@vishay.com, PDD-Asia@vishay.com, PDD-Europe@vishay.com
For technical questions within your region, please contact one of the following:
T
T
T
0.8
T
Pulse Width = 300 µs
1 % Duty Cycle
J
J
J
60
J
= 25 °C
= 125 °C
= 100 °C
= 25 °C
0.180 (4.57)
0.200 (5.08)
0.028 (0.76)
0.034 (0.86)
0.125 x 45°
1.0
DIA.
Polarity shown on front side of case: positive lead by beveled corner
(3.2)
80
2KBP005M thru 2KBP10M, 3N253 thru 3N259
1.2
(15.2)
0.60
MIN.
100
1.4
0.600 (15.24)
0.560 (14.22)
Case Style KBPM
(1.52)
0.060
0.160 (4.1)
0.140 (3.6)
0.50 (12.7) MIN.
0.460 (11.68)
0.420 (10.67)
100
10
0.105 (2.67)
0.085 (2.16)
1
Figure 5. Typical Junction Capacitance Per Diode
0.1
Vishay General Semiconductor
0.460 (11.68)
0.500 (12.70)
Reverse Voltage (V)
1
10
T
f = 1.0 MHz
V
J
sig
= 25 °C
= 50 mVp-p
www.vishay.com
100
3