MT46V32M16D2TH-7L Micron Technology Inc, MT46V32M16D2TH-7L Datasheet - Page 32

• Manufacturer Part Number: MT46V32M16D2TH-7L
• Manufacturer: Micron Technology Inc
• Type: DDR SDRAMr

Specifications of MT46V32M16D2TH-7L

• Organization: 32Mx16
• Density: 512Mb
• Address Bus: 15b
• Access Time (max): 750ps
• Maximum Clock Rate: 266MHz
• Operating Supply Voltage (typ): 2.5V
• Package Type: TSOP
• Operating Temp Range: 0C to 70C
• Operating Supply Voltage (max): 2.7V
• Operating Supply Voltage (min): 2.3V
• Pin Count: 66
• Mounting: Surface Mount
• Operating Temperature Classification: Commercial
• Lead Free Status / Rohs Status: Not Compliant

512Mb: x4, x8, x16 DDR SDRAM
512Mx4x8x16DDR_A.p65 – Rev. A; Pub 10/00
COMMAND
ADDRESS
t
t
t
DQSS (NOM)
DQSS (MIN)
DQSS (MAX)
DQS
DQS
DQS
NOTE: 1. DI b = data-in for column b.
CK#
DM
DM
DM
DQ
DQ
DQ
CK
2. An interrupted burst of 4 or 8 is shown; two data elements are written.
3. One subsequent element of data-in is applied in the programmed order following DI b.
4. t WTR is referenced from the first positive CK edge after the last data-in pair.
5. A10 is LOW with the WRITE command (auto precharge is disabled).
6. DQS is required at T2 and T2n (nominal case) to register DM.
7. If the burst of 8 was used, DM would not be required at T3 -T4n because the READ command would
mask the last two data elements.
Bank a,
WRITE
Col b
T0
t
t
t
DQSS
DQSS
DQSS
DI
b
NOP
T1
DI
b
DI
b
WRITE to READ – Interrupting
T1n
NOP
T2
t
WTR
Figure 20
T2n
32
Bank a,
READ
Col n
T3
DON’T CARE
Micron Technology, Inc., reserves the right to change products or specifications without notice.
CL = 2
CL = 2
CL = 2
T4
NOP
512Mb: x4, x8, x16
TRANSITIONING DATA
T5
NOP
DI
DI
DI
n
n
n
DDR SDRAM
T5n
©2000, Micron Technology, Inc.
ADVANCE
T6
NOP
T6n