MT46H16M16LFBF-6:H TR Micron Technology Inc, MT46H16M16LFBF-6:H TR Datasheet - Page 84
![no-image](/images/manufacturer_photos/0/4/441/micron_technology_inc_sml.jpg)
MT46H16M16LFBF-6:H TR
Manufacturer Part Number
MT46H16M16LFBF-6:H TR
Description
Manufacturer
Micron Technology Inc
Type
DDR SDRAMr
Datasheet
1.MT46H16M16LFBF-6H_TR.pdf
(96 pages)
Specifications of MT46H16M16LFBF-6:H TR
Organization
16Mx16
Density
256Mb
Address Bus
15b
Access Time (max)
6.5/5ns
Maximum Clock Rate
166MHz
Operating Supply Voltage (typ)
1.8V
Package Type
VFBGA
Operating Temp Range
0C to 70C
Operating Supply Voltage (max)
1.95V
Operating Supply Voltage (min)
1.7V
Supply Current
100mA
Pin Count
60
Mounting
Surface Mount
Operating Temperature Classification
Commercial
Lead Free Status / Rohs Status
Compliant
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- Download datasheet (4Mb)
Figure 45: Bank Read – Without Auto Precharge
PDF: 09005aef834bf85b
256mb_mobile_ddr_sdram_t36n.pdf - Rev. H 11/09 EN
Case 2:
Case 1:
Command
BA0, BA1
Address
DQ
DQ
DQS
DQS
t
t
AC (MAX) and
CK#
CKE
A10
AC (MIN) and
DM
CK
7,8
7,8
7
7
t
t
IS
IS
NOP
T0
t
t
DQSCK (MIN)
DQSCK (MAX)
t
t
1
IH
IH
Notes:
t
ACTIVE
Bank x
IS
t
Row
IS
Row
T1
t
IH
t
1. NOP commands are shown for ease of illustration; other commands may be valid at
2. BL = 4 in the case shown.
3. PRE = PRECHARGE.
4. Disable auto precharge.
5. Bank x at T5 is “Don’t Care” if A10 is HIGH at T5.
6. The PRECHARGE command can only be applied at T5 if
IH
t
CK
these times.
t
t
t
RCD
RAS
RC
NOP
6
T2
1
t
CH
t
CL
Bank x
READ
t
Note 4
t
Col n
IS
LZ (MIN)
T3
t
2
IH
CL = 2
84
t
RPRE
t
t
AC (MIN)
LZ (MIN)
NOP
T4
256Mb: x16, x32 Mobile LPDDR SDRAM
1
t
AC (MAX)
D
t
Micron Technology, Inc. reserves the right to change products or specifications without notice.
OUT
RPRE
t
DQSCK (MIN)
One bank
All banks
Bank x
D
PRE
OUT
T5
D
t
OUT
DQSCK (MAX)
3
5
D
T5n
OUT
D
OUT
D
NOP
t
OUT
T6
RPST
D
t
RAS (MIN) is met.
OUT
Don’t Care
1
t
RP
T6n
t
HZ (MAX)
©2008 Micron Technology, Inc. All rights reserved.
D
t
RPST
OUT
Auto Precharge
NOP
T7
1
Transitioning Data
ACTIVE
Bank x
Row
Row
T8
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