K4S28163LD-RF75000 Samsung Semiconductor, K4S28163LD-RF75000 Datasheet
K4S28163LD-RF75000
Specifications of K4S28163LD-RF75000
Related parts for K4S28163LD-RF75000
K4S28163LD-RF75000 Summary of contents
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... K4S28163LD-R(B)L/N/P (VDD/VDDQ 2.5V/1.8V or 2.5V/2.5V) 8Mx16 Mobile SDRAM 54CSP Revision 1.3 December 2002 CMOS SDRAM Rev. 1.3 Dec. 2002 ...
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... CKE * Samsung Electronics reserves the right to change products or specification without notice. GENERAL DESCRIPTION The K4S28163LD is 134,217,728 bits synchronous high data rate Dynamic RAM organized 2,097,152 words by 16 bits, fabricated with SAMSUNG s high performance CMOS technology. Synchronous design allows precise cycle control with the use of system clock and I/O transactions are possible on every clock cycle ...
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... K4S28163LD-R(B)L/N/P Package Dimension and Pin Configuration < Bottom View *2: Top View Max. 0.20 Encapsulant *1: Bottom View < Top View #A1 Ball Origin Indicator *1 > E > CMOS SDRAM *2 < Top View 54Ball(6x9) CSP DQ15 SSQ DDQ B DQ14 DQ13 V V DDQ SSQ C DQ12 DQ11 V V SSQ ...
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... K4S28163LD-R(B)L/N/P ABSOLUTE MAXIMUM RATINGS Parameter Voltage on any pin relative to Vss Voltage on V supply relative to Vss D D Storage temperature Power dissipation Short circuit current Notes : Permanent device damage may occur if ABSOLUTE MAXIMUM RATINGS are exceeded. Functional operation should be restricted to recommended operating condition. ...
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... CC3 Operating Current I CC4 (Burst Mode) Refresh Current I CC5 Self Refresh Current I CC6 Notes : 1. Measured with outputs open. 2. Refresh period is 64ms. 3. K4S28163LD-R(B)L** 4. K4S28163LD-R(B)N** 5. K4S28163LD-R(B)P** 6. Unless otherwise noted, input swing IeveI is CMOS(V = 0V, T =Commercial, Extended, Industrial Temperature Test Condition Burst length = (min ...
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... K4S28163LD-R(B)L/N/P AC OPERATING TEST CONDITIONS Parameter AC input levels (Vih/Vil) Input timing measurement reference level Input rise and fall time Output timing measurement reference level Output load condition Output 500 (Fig Output Load Circuit OPERATING AC PARAMETER Parameter Row active to row active delay RAS to CAS delay ...
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... K4S28163LD-R(B)L/N/P AC CHARACTERISTICS (AC operating conditions unless otherwise noted) Parameter CAS latency=3 CLK cycle time CAS latency=2 CAS latency=1 CAS latency=3 CLK to valid output delay CAS latency=2 CAS latency=1 CAS latency=3 Output data hold time CAS latency=2 CAS latency=1 CLK high pulse width ...
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... K4S28163LD-R(B)L/N/P SIMPLIFIED TRUTH TABLE COMMAND Register Mode Register Set Auto Refresh Entry Refresh Self Refresh Bank Active & Row Addr. Read & Auto Precharge Disable Column Address Auto Precharge Enable Write & Auto Precharge Disable Column Address Auto Precharge Enable Burst Stop ...