K4M641633K-BN75000 Samsung Semiconductor, K4M641633K-BN75000 Datasheet - Page 4
![no-image](/images/manufacturer_photos/0/5/578/samsung_semiconductor_sml.jpg)
K4M641633K-BN75000
Manufacturer Part Number
K4M641633K-BN75000
Description
Manufacturer
Samsung Semiconductor
Type
Mobile SDRAMr
Datasheet
1.K4M641633K-BN75000.pdf
(12 pages)
Specifications of K4M641633K-BN75000
Organization
4Mx16
Density
64Mb
Address Bus
14b
Access Time (max)
7/5.4ns
Maximum Clock Rate
133MHz
Operating Supply Voltage (typ)
3V
Package Type
FBGA
Operating Temp Range
-25C to 85C
Operating Supply Voltage (max)
3.6V
Operating Supply Voltage (min)
2.7V
Supply Current
80mA
Pin Count
54
Mounting
Surface Mount
Operating Temperature Classification
Commercial
Lead Free Status / Rohs Status
Compliant
K4M641633K - R(B)N/G/L/F
ABSOLUTE MAXIMUM RATINGS
NOTES:
Permanent device damage may occur if ABSOLUTE MAXIMUM RATINGS are exceeded.
Functional operation should be restricted to recommended operating condition.
Exposure to higher than recommended voltage for extended periods of time could affect device reliability.
DC OPERATING CONDITIONS
Recommended operating conditions (Voltage referenced to V
NOTES :
1. Under all conditions VDDQ must be less than or equal to VDD.
2. VIH (max) = 5.3V AC.The overshoot voltage duration is ≤ 3ns.
3. VIL (min) = -2.0V AC. The undershoot voltage duration is ≤ 3ns.
4. Any input 0V ≤ VIN ≤ VDDQ.
5. Dout is disabled, 0V ≤ VOUT ≤ VDDQ.
CAPACITANCE
Supply voltage
Input logic high voltage
Input logic low voltage
Output logic high voltage
Output logic low voltage
Input leakage current
Clock
RAS, CAS, WE, CS, CKE, DQM
Address
DQ
Voltage on any pin relative to V
Voltage on V
Storage temperature
Power dissipation
Short circuit current
Input leakage currents include Hi-Z output leakage for all bi-directional buffers with tri-state outputs.
0
~ DQ
Parameter
15
Parameter
DD
supply relative to V
Pin
(V
DD
= 3.0V & 3.3V, T
ss
ss
Symbol
V
V
V
V
V
V
DDQ
I
OH
DD
OL
LI
IH
IL
A
= 23°C, f = 1MHz, V
Symbol
C
C
C
C
ADD
OUT
CLK
IN
Min
-0.3
2.7
2.7
2.2
2.4
-2
-
SS
V
V
Symbol
= 0V, T
DD
IN
T
, V
I
P
REF
, V
STG
OS
D
OUT
DDQ
4
=0.9V ± 50 mV)
A
Min
1.5
1.5
1.5
2.0
Typ
= -25°C ~ 85°C for Extended, -25°C ~ 70°C for Commercial)
3.0
3.0
3.0
0
-
-
-
V
DDQ
Max
Max
3.6
3.6
0.5
0.4
3.5
3.0
3.0
4.5
2
-
+ 0.3
-55 ~ +150
-1.0 ~ 4.6
-1.0 ~ 4.6
Value
1.0
50
Mobile-SDRAM
Unit
uA
V
V
V
V
V
V
Unit
pF
pF
pF
pF
I
I
OH
January 2006
OL
Unit
Note
mA
°C
= -2mA
W
= 2mA
V
V
Note
1
1
2
3
4