K4H510438CUCB3000 SAM Samsung Semiconductor, K4H510438CUCB3000 SAM Datasheet - Page 15

• Manufacturer Part Number: K4H510438CUCB3000 SAM
• Manufacturer: Samsung Semiconductor
• Type: DDR SDRAMr

Specifications of K4H510438CUCB3000 SAM

• Organization: 128Mx4
• Density: 512Mb
• Address Bus: 15b
• Access Time (max): 700ps
• Maximum Clock Rate: 333MHz
• Operating Supply Voltage (typ): 2.5V
• Package Type: TSOP-II
• Operating Temp Range: 0C to 70C
• Operating Supply Voltage (max): 2.7V
• Operating Supply Voltage (min): 2.3V
• Supply Current: 150mA
• Pin Count: 66
• Mounting: Surface Mount
• Operating Temperature Classification: Commercial
• Lead Free Status / Rohs Status: Compliant

18.0 Overshoot/Undershoot specification for Data, Strobe and Mask Pins
DDR SDRAM 512Mb C-die (x4, x8, x16)
Maximum peak amplitude allowed for overshoot
Maximum peak amplitude allowed for undershoot
The area between the overshoot signal and VDD must be less than or equal to
The area between the undershoot signal and GND must be less than or equal to
DQ/DM/DQS AC overshoot/Undershoot Definition
-1
-2
-3
-4
-5
5
4
3
2
1
0
Parameter
Maximum Amplitude = 1.2V
0 0.5 1.0 1.42 1.5 2.0 2.5 3.0 3.5 4.0 4.5 5.0 5.5 5.68 6.0 6.5 7.0
Area = 2.4V-ns
VDDQ
Overshoot
Tims(ns)
Maximum Amplitude = 1.2V
undershoot
GND
DDR400
2.4 V-ns
2.4 V-ns
1.2 V
1.2 V
Rev. 1.2 January 2007
Specification
DDR333
2.4 V-ns
2.4 V-ns
1.2 V
1.2 V
DDR SDRAM
DDR200/266
2.4 V-ns
2.4 V-ns
1.2 V
1.2 V