TIPP112-R Bourns Inc., TIPP112-R Datasheet - Page 2
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TIPP112-R
Manufacturer Part Number
TIPP112-R
Description
Manufacturer
Bourns Inc.
Datasheet
1.TIPP112-R.pdf
(2 pages)
Specifications of TIPP112-R
Polarity
NPN
Number Of Elements
1
Collector-emitter Voltage
100V
Collector-base Voltage(max)
100V
Emitter-base Voltage (max)
5V
Collector-emitter Saturation Voltage
2.5@8mA@2AV
Dc Current Gain
1000@1A@4V/500@2A@4V
Operating Temp Range
-55C to 150C
Operating Temperature Classification
Military
Mounting
Through Hole
Pin Count
3
Package Type
TO-92
Lead Free Status / Rohs Status
Not Compliant
TIPP110, TIPP111, TIPP112
NPN SILICON POWER DARLINGTONS
electrical characteristics at 25°C case temperature
NOTES: 4. These parameters must be measured using pulse techniques, t
2
V
V
(BR)CEO
I
I
CE(sat)
I
V
V
h
CEO
CBO
EBO
FE
EC
BE
5. These parameters must be measured using voltage-sensing contacts, separate from the current carrying contacts and located
PARAMETER
Collector-emitter
breakdown voltage
Collector-emitter
cut-off current
Collector-base
cut-off current
Emitter cut-off
current
Forward current
transfer ratio
Collector-emitter
saturation voltage
Base-emitter
voltage
Parallel diode
forward voltage
within 3.2 mm from device body.
I
(see Note 4)
V
V
V
V
V
V
V
V
V
I
V
I
C
B
E
CE
CE
CE
CE
CE
CE
EB
CE
CE
CE
=
=
= 10 mA
= 30 V
= 40 V
= 50 V
= 60 V
= 80 V
= 100 V
=
=
=
=
8 mA
4 A
5 V
4 V
4 V
4 V
I
V
V
V
I
I
I
I
I
I
I
I
I
TEST CONDITIONS
B
B
B
B
C
C
C
C
C
B
BE
BE
BE
= 0
= 0
= 0
= 0
= 0
= 0
= 1 A
= 2 A
= 2 A
= 2 A
= 0
= 0
= 0
p
= 300 µs, duty cycle ≤ 2%.
R O D U C T
TIPP110
TIPP111
TIPP112
TIPP110
TIPP111
TIPP112
TIPP110
TIPP111
TIPP112
(see Notes 4 and 5)
(see Notes 4 and 5)
(see Notes 4 and 5)
(see Notes 4 and 5)
Specifications are subject to change without notice.
MAY 1989 - REVISED SEPTEMBER 2002
I N F O R M A T I O N
1000
MIN
100
500
60
80
TYP
MAX
2.5
2.8
3.5
2
2
2
1
1
1
2
UNIT
mA
mA
mA
V
V
V
V