50MT060ULS International Rectifier, 50MT060ULS Datasheet - Page 2

• Manufacturer Part Number: 50MT060ULS
• Manufacturer: International Rectifier

Specifications of 50MT060ULS

• Channel Type: N
• Configuration: Single
• Collector-emitter Voltage: 600V
• Collector Current (dc) (max): 100A
• Gate To Emitter Voltage (max): ±20V
• Mounting: Screw
• Operating Temperature (min): -40C
• Operating Temperature (max): 150C
• Operating Temperature Classification: Automotive
• Lead Free Status / Rohs Status: Not Compliant

2
Electrical Characteristics @ T
Switching Characteristics @ T
50MT060ULS
I27123 rev. C 02/03
V
V
V
B
g
I
V
I
Q
Q
Q
E
E
E
E
E
E
C
C
C
C
trr
Irr
Qrr
di
CES
GES
(BR)CES
V
T
fe
CE(on)
GE(th)
VR
FM
on
off
ts
on
off
ts
ies
oes
res
t
(rec)
g
ge
gc
GE(th)
J
M/
dt
/ Temperature Coeff. of
Collector-to-Emitter Breakdown Voltage 600
Collector-to-Emitter Voltage
Gate Threshold Voltage
Diode Reverse Breakdown Voltage
Threshold Voltage
Forward Transconductance
Collector-to-Emiter Leaking Current
Diode Forward Voltage Drop
Gate-to-Emitter Leakage Current
Total Gate Charge (turn-on)
Gate-Emitter Charge (turn-on)
Gate-Collector Charge (turn-on)
Turn-On Switching Loss
Turn-Off Switching Loss
Total Switching Loss
Turn-On Switching Loss
Turn-Off Switching Loss
Total Switching Loss
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Diode Junction Capacitance
Diode Reverse Recovery Time
Diode Peak Reverse Current
Diode Recovery Charge
Diode PeakRate of Fall of Recovery
During t
Parameters
Parameters
b
J
J
= 25°C (unless otherwise specified)
= 25°C (unless otherwise specified)
600
Min Typ Max Units Test Conditions
Min Typ Max Units Test Conditions
22
3
1.69
1.96
1.88
1.64
1.56
9800 14700
- 13
370
163
602
121
118
320
236
6.5
0.7
1.7
2.4
1.1
2.5
3.6
29
64
99
± 250
2.31
2.55
2.24
0.25
1.82
1.74
555
245
150
735
903
182
177
3.8
5.5
9.8
1.2
2.6
1.7
3.8
96
6
6
mV/°C V
A/µs
mA
nA
nC
mJ
mJ
nC
pF
ns
V
S
V
A
V
V
V
V
I
I
V
V
V
I
I
V
I
V
V
I
R
Energy losses include tail and diode reverse
recovery
I
R
Energy losses include tail and diode reverse
recovery
V
V
f = 1.0 MHz
V
V
di/dt = 200A/µs
R
C
R
F
F
C
C
C
GE
GE
GE
GE
CE
CE
GE
GE
GE
CC
GE
GE
CC
r
CC
g
g
g
= 200µA
= 100A, V
= 100A, V
= 100A
= 50A, V
= 50A, V
= 600V, f = 1.0 MHz
= 0.5mA
= 5
= 5
= 5
= 15V
= 0V
= 30V
= 480V, I
= 480V
= V
= 50V, I
= 0V, I
= 15V, I
= 15V, I
= 15V, I
= 0V, V
= 0V, V
= ± 20V
GE
T
J
, I
CC
CC
C
= 125°C
CE
CE
C
C
GE
GE
C
C
C
C
= 250µA
= 480V, V
= 480V, V
= 500µA
= 50A
= 100A
= 50A
= 100A
= 100A, T
= 600V
= 600V, T
= 0V
= 0V, T
GE
GE
J
www.irf.com
J
= 150°C
J
= 15V,
= 15V
= 150°C
= 150°C