EESG3 Omron, EESG3 Datasheet - Page 2

• Manufacturer Part Number: EESG3
• Manufacturer: Omron
• Type: Transmissiver

Specifications of EESG3

• Number Of Elements: 1
• Output Device: Phototransistor
• Gap Width: 3.6mm
• Reverse Breakdown Voltage: 4V
• Collector-emitter Voltage: 30V
• Forward Current: 50mA
• Collector Current (dc) (max): 20mA
• Power Dissipation: 100mW
• Fall Time: 4000ns
• Rise Time: 4000ns
• Pin Count: 4
• Mounting: Through Hole
• Operating Temp Range: -25C to 85C
• Operating Temperature Classification: Commercial
• Lead Free Status / Rohs Status: Compliant

■ Engineering Data
168
Forward Current vs. Collector
Dissipation Temperature Rating
Light Current vs. Collector−Emitter
Voltage Characteristics (Typical)
Response Time vs. Load Resis-
tance Characteristics (Typical)
Response Time Measurement
Circuit
Output
Collector−Emitter voltage V
Input
Input
Ambient temperature Ta (°C)
Load resistance R
Photomicrosensor (Transmissive)
P
I
F
C
90 %
10 %
I
I
I
I
I
F
F
F
F
F
= 25 mA
= 20 mA
= 15 mA
= 10 mA
= 5 mA
L
Ta = 25°C
V
Ta = 25°C
(kΩ)
CC
CE
= 5 V
(V)
Output
Forward Current vs. Forward
Voltage Characteristics (Typical)
Sensing Position Characteristics
(Typical)
Relative Light Current vs.
Ambient Temperature Character-
istics (Typical)
EE-SG3/EE-SG3-B
Ambient temperature Ta (°C)
Forward voltage V
Distance d (mm)
Ta = −30°C
Ta = 25°C
Ta = 70°C
(Center of
optical axis)
F
I
V
Ta = 25 ° C
F
(V)
I
V
CE
= 20 mA
F
CE
= 20 mA
= 10 V
= 5 V
Light Current vs. Forward Current
Characteristics (Typical)
Dark Current vs. Ambient
Temperature Characteristics
(Typical)
Sensing Position Characteristics
(Typical)
120
100
80
60
40
20
0
−2.0
Ambient temperature Ta (°C)
V
0 lx
CE
−1.5
= 10 V
Forward current I
−1.0
Distance d (mm)
−0.5
0
d
0.5
F
Ta = 25°C
V
I
V
Ta = 25 ° C
CE
F
(mA)
CE
= 20 mA
1.0
= 10 V
= 10 V
1.5
2.0