2N6282G ON Semiconductor, 2N6282G Datasheet - Page 5

• Manufacturer Part Number: 2N6282G
• Manufacturer: ON Semiconductor

Specifications of 2N6282G

• Polarity: NPN
• Number Of Elements: 1
• Collector-emitter Voltage: 60V
• Collector-base Voltage(max): 60V
• Emitter-base Voltage (max): 5V
• Base-emitter Saturation Voltage (max): 4@200mA@20AV
• Collector Current (dc) (max): 20A
• Dc Current Gain: 100@20A@3V
• Operating Temp Range: -65C to 200C
• Operating Temperature Classification: Military
• Mounting: Through Hole
• Pin Count: 2 +Tab
• Package Type: TO-204
• Lead Free Status / Rohs Status: Compliant

Motorola Bipolar Power Transistor Device Data
+ 5.0
+ 4.0
+ 3.0
+ 2.0
+ 1.0
10 –1
– 1.0
– 2.0
– 3.0
– 4.0
– 5.0
10 5
10 4
10 3
10 2
10 1
10 0
– 0.6
0
0.2 0.3
2N6282
2N6283
2N6284
BASE
NPN
– 0.4
*APPLIES FOR I C /I B
* V C for V CE(sat)
V B for V BE
REVERSE
T J = 150 C
V CE = 30 V
– 0.2
25 C
100 C
0.5 0.7
V BE , BASE–EMITTER VOLTAGE (VOLTS)
2N6282, 2N6283, 2N6284
I C , COLLECTOR CURRENT (AMP)
0
[
25 C to + 150 C
1.0
8.0 k
+ 0.2 + 0.4
– 55 C to + 25 C
h FE @ V CE
25 C to 150 C
NPN
[
2.0 3.0
COLLECTOR
60
250
+ 0.6 + 0.8 + 1.0 + 1.2 + 1.4
EMITTER
FORWARD
+
3.0 V
5.0 7.0
– 55 C to + 25 C
Figure 13. Temperature Coefficients
Figure 14. Collector Cut–Off Region
Figure 15. Darlington Schematic
10
20
2N6282 thru 2N6284 2N6285 thru 2N6287
10 –1
10 –2
10 –3
+ 5.0
+ 4.0
+ 3.0
+ 2.0
+ 1.0
– 1.0
– 2.0
– 3.0
– 4.0
– 5.0
10 3
10 2
10 1
10 0
+ 0.6
0
0.2 0.3
T J = 150 C
+ 0.4
* V C for V CE(sat)
*APPLIES FOR I C /I B
V CE = 30 V
REVERSE
V B for V BE
2N6285
2N6286
2N6287
BASE
100 C
25 C
PNP
+ 0.2
0.5 0.7
V BE , BASE–EMITTER VOLTAGE (VOLTS)
I C , COLLECTOR CURRENT (AMP)
0
2N6285, 2N6286, 2N6287
25 C to + 150 C
1.0
– 0.2 – 0.4
[
h FE @ V CE
8.0 k
2.0 3.0
PNP
– 55 C to + 25 C
25 C to 150 C
250
– 0.6 – 0.8
[
FORWARD
+
COLLECTOR
60
EMITTER
3.0 V
5.0 7.0
– 55 C to + 25 C
– 1.0 – 1.2 – 1.4
10
5
20