SMFV008 Samsung Semiconductor, SMFV008 Datasheet - Page 7

• Manufacturer Part Number: SMFV008
• Manufacturer: Samsung Semiconductor

Specifications of SMFV008

• Lead Free Status / Rohs Status: Supplier Unconfirmed

VALID BLOCK
NOTE :
1. The SMFV008 may include invalid blocks. Invalid blocks are defined as blocks that contain one or more bad bits. Do not try to access these invalid
AC TEST CONDITION
CAPACITANCE
NOTE : Capacitance is periodically sampled and not 100% tested.
MODE SELECTION
NOTE : 1. X can be V
Program/Erase Characteristics
SMFV008
Valid Block Number
Input Pulse Levels
Input Rise and Fall Times
Input and Output Timing Levels
Output Load 3.0V 10%
Output Load 3.3V 10%
Input/Output Capacitance
Input Capacitance
Program Time
Number of Partial Program Cycles in the Same Page
Block Erase Time
blocks for program and erase. During its lifetime of 10 years and/or 1million program/erase cycles, the minimum number of valid blocks are guaran-
teed though its initial number could be reduced. (Refer to the attached technical notes)
CLE
H
H
X
X
X
X
L
L
L
L
L
2. WP should be biased to CMOS high or CMOS low for standby.
Parameter
Item
ALE
X
H
H
X
X
X
L
L
L
L
L
(1)
IL
Parameter
or V
(
T
IH.
A
Parameter
=25 C, V
CE
X
X
X
H
L
L
L
L
L
L
L
(T
A
=0 to 55 C, V
CC
=3.3V, f=1.0MHz)
Symbol
Symbol
C
N
C
WE
H
H
I/O
X
X
X
X
VB
IN
CC
=2.7~3.6V
Test Condition
RE
H
H
H
H
H
H
X
X
X
X
V
V
1014
IN
IL
Min
=0V
=0V
Symbol
unless otherwise noted)
7
0V/V
t
t
PROG
Nop
BERS
WP
H
H
H
H
H
X
X
X
X
L
CC
(2)
1 TTL GATE and CL = 100pF
1 TTL GATE and CL = 50pF
Data Input
Sequential Read & Data Output
During Read(Busy)
During Program(Busy)
During Erase(Busy)
Write Protect
Stand-by
Read Mode
Write Mode
1020
Min
Typ.
Min
-
-
-
-
-
0.8V and 2.0V
0.4V to 2.4V
Value
5ns
Command Input
Address Input(3clock)
Command Input
Address Input(3clock)
Typ
200
2
-
1024
Max
Max
Mode
10
10
SmartMedia
1000
Max
10
4
Blocks
Unit
Unit
pF
pF
cycles
Unit
ms
s
TM