K4T51163QE-ZCE6000 Samsung Semiconductor, K4T51163QE-ZCE6000 Datasheet - Page 40

• Manufacturer Part Number: K4T51163QE-ZCE6000
• Manufacturer: Samsung Semiconductor
• Type: DDR2 SDRAMr

Specifications of K4T51163QE-ZCE6000

• Organization: 32Mx16
• Density: 512Mb
• Address Bus: 16b
• Access Time (max): 450ps
• Maximum Clock Rate: 667MHz
• Operating Supply Voltage (typ): 1.8V
• Package Type: FBGA
• Operating Temp Range: 0C to 95C
• Operating Supply Voltage (max): 1.9V
• Operating Supply Voltage (min): 1.7V
• Supply Current: 170mA
• Pin Count: 84
• Mounting: Surface Mount
• Operating Temperature Classification: Commercial
• Lead Free Status / Rohs Status: Compliant

K4T51043QE
K4T51083QE
K4T51163QE
V
V
V
V
V
V
DDQ
IH
IH
REF
IL
IL
(DC)max
(AC)max
Hold Slew Rate
(AC)min
(DC)min
Rising Signal
(DC)
CK
CK
V
SS
dc to V
Figure 15 - IIIustration of nominal slew rate for tIH
dc to V
region
region
=
V
REF
REF
REF
(DC) - V
∆TR
slew rate
nominal
tIS
IL
(DC)max
40 of 47
tIH
∆TR
Hold Slew Rate
Falling Signal
nominal
slew rate
tIS
=
V
IH
(DC)min - V
tIH
∆TF
∆TF
REF
(DC)
DDR2 SDRAM
Rev. 1.9 July 2008