MT41J512M4HX-15E:D Micron Technology Inc, MT41J512M4HX-15E:D Datasheet - Page 42

• Manufacturer Part Number: MT41J512M4HX-15E:D
• Description: IC DDR3 SDRAM 2GBIT 78FBGA
• Manufacturer: Micron Technology Inc
• Type: DDR3 SDRAMr
• Series: -r

Specifications of MT41J512M4HX-15E:D

• Organization: 512Mx4
• Address Bus: 18b
• Maximum Clock Rate: 1.333GHz
• Operating Supply Voltage (typ): 1.5V
• Package Type: FBGA
• Operating Temp Range: 0C to 95C
• Operating Supply Voltage (max): 1.575V
• Operating Supply Voltage (min): 1.425V
• Supply Current: 155mA
• Pin Count: 78
• Mounting: Surface Mount
• Operating Temperature Classification: Commercial
• Format - Memory: RAM
• Memory Type: DDR3 SDRAM
• Memory Size: 2G (512M x 4)
• Speed: 667MHz
• Interface: Parallel
• Voltage - Supply: 1.425 V ~ 1.575 V
• Operating Temperature: 0°C ~ 95°C
• Package / Case: 78-TFBGA
• Lead Free Status / Rohs Status: Compliant

Table 19: I
PDF: 09005aef826aaadc
2Gb_DDR3_SDRAM.pdf – Rev. K 04/10 EN
DD7
16
17
18
19
Measurement Loop (Continued)
3 × nFAW + 4 × nRRD + 1
3 × nFAW + 2 × nRRD
3 × nFAW + 3 × nRRD
3 × nFAW + 4 × nRRD
3 × nFAW + nRRD
Notes:
1. DQ, DQS, DQS# are midlevel unless driven as required by the RD command.
2. DM is LOW.
3. Burst sequence is driven on each DQ signal by the RD command.
4. AL = CL-1.
Electrical Specifications – I
D
Repeat cycle 3 × nFAW + 4 × nRRD until 4 × nFAW - 1, if needed
1
0
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0
Repeat sub-loop 11, use BA[2:0] = 5
Repeat sub-loop 10, use BA[2:0] = 6
Repeat sub-loop 11, use BA[2:0] = 7
0
Micron Technology, Inc. reserves the right to change products or specifications without notice.
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DD
Specifications and Conditions
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© 2006 Micron Technology, Inc. All rights reserved.
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Definitions
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