TIM1112-8 Toshiba, TIM1112-8 Datasheet
TIM1112-8
Specifications of TIM1112-8
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TIM1112-8 Summary of contents
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... No license is granted by implication or otherwise under any patent or patent rights of TOSHIBA or others. The information contained herein is subject to change without prior notice therefor advisable to contact TOSHIBA before proceeding with design of equipment incorporating this product. MICROWAVE POWER GaAs FET TIM1112-8 BROAD BAND INTERNALLY MATCHED FET HERMETICALLY SEALED PACKAGE SYMBOL ...
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... CHARACTERISTICS Drain-Source Voltage Gate-Source Voltage Drain Current Total Power Dissipation (Tc= 25 ° C) Channel Temperature Storage Temperature PACKAGE OUTLINE (2-11C1B) HANDLING PRECAUTIONS FOR PACKAGE MODEL Soldering iron should be grounded and the operating time should not exceed 10 seconds at 260°C. TIM1112-8 SYMBOL UNIT ° ...
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... RF PERFORMANCE Output Power (Pout) vs. Frequency V =9V DS ≅3. Pin=34.5dBm 11.6 Output Power(Pout) vs. Input Power(Pin) 42 freq.=12.7GHz 41 V =9V DS ≅3. TIM1112-8 12.0 12.4 Frequency(GHz) Pout ηadd 32 34 Pin(dBm ...
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... Power Dissipation(PT) vs. Case Temperature(Tc TIM1112-8 80 120 Tc( ° 160 200 ...