U423-E3 Vishay, U423-E3 Datasheet

no-image

U423-E3

Manufacturer Part Number
U423-E3
Description
Manufacturer
Vishay
Datasheet

Specifications of U423-E3

Channel Type
N
Configuration
Dual
Gate-source Voltage (max)
-40V
Drain-gate Voltage (max)
-40V
Operating Temperature (min)
-55C
Operating Temperature (max)
150C
Operating Temperature Classification
Military
Mounting
Through Hole
Pin Count
6
Package Type
TO-78
Lead Free Status / Rohs Status
Compliant
DESCRIPTION
The U421/423 are monolithic dual n-channel JFETs designed
to provide very high input impedance for differential
amplification and impedance matching. Among its many
unique features, this series offers operating gate current
specified at - 250 fA.
ABSOLUTE MAXIMUM RATINGS
Gate-Drain, Gate-Source Voltage
Gate-Gate Voltage
Gate Current
Lead Temperature (
Storage Temperature
Operating Junction Temperature
Document Number: 70248
S-03180—Rev. D, 17-Feb-03
PRODUCT SUMMARY
FEATURES
D Monolithic Design
D High Slew Rate
D Low Offset/Drift Voltage
D Low Gate Leakage: 0.2 pA
D Low Noise
D High CMRR: 102 dB
Part Number
U421
U423
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
1
/
16
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
V
” from case for 10 sec.)
GS(off)
-0.4 to -2
-0.4 to-2
. . . . . . . . . . . . . . . . . . . . . . . . . .
(V)
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Monolithic N-Channel JFET Duals
V
(BR)GSS
. . . . . . . . . . . . . . . . . .
BENEFITS
D Tight Differential Match vs. Current
D Improved Op Amp Speed, Settling Time Accuracy
D Minimum Input Error/Trimming Requirement
D Insignificant Signal Loss/Error Voltage
D High System Sensitivity
D Minimum Error with Large Input Signals
-40
-40
Min (V)
D
1
G
-55 to 150_C
-65 to 200_C
1
S
1
2
g
fs
300 _C
"40 V
1
10 mA
3
-40 V
Min (mS)
0.3
0.3
Top View
TO-78
Case, Substrate
4
The hermetic TO-78 package is available with full military
processing (see Military Information).
For similar products see the low-noise U/SST401 series and
high-gain 2N5911/5912 data sheets.
Power Dissipation :
Notes
a.
b.
I
G
5
Derate 2.4 mW/_C above 25_C
Derate 4 mW/_C above 25_C
7
Max (pA) jV
-0.25
-0.25
6
G
S
2
2
D
2
GS1
- V
Per Side
Total
GS2
b
10
25
APPLICATIONS
D Ultralow Input Current
D High-Speed Comparators
D Impedance Converters
. . . . . . . . . . . . . . . . . . . . . . . . . . .
j Max (mV)
a
Differential Amps
. . . . . . . . . . . . . . . . . . . . . . . .
Vishay Siliconix
U421/423
www.vishay.com
300 mW
500 mW
7-1

Related parts for U423-E3

U423-E3 Summary of contents

Page 1

... Monolithic N-Channel JFET Duals PRODUCT SUMMARY Part Number V (V) V GS(off) (BR)GSS U421 -0.4 to-2 U423 -0 FEATURES D Monolithic Design D High Slew Rate D Low Offset/Drift Voltage D Low Gate Leakage: 0 Low Noise D High CMRR: 102 dB DESCRIPTION The U421/423 are monolithic dual n-channel JFETs designed to provide very high input impedance for differential amplification and impedance matching ...

Page 2

... kHz = kHz 0 kHz = kHz 0.4 1 MHz -55 to 125_C 102 DG D Limits U421 U423 Unit a Min Max Min Max -40 -40 "40 "40 V -0 1000 60 1000 - -0.25 -0. -250 -250 W -1.8 -1.8 V 0.3 1.5 0.3 1 0.12 0.35 0.12 0. 1.5 1.5 nV⁄ √Hz ...

Page 3

... V GS -0.1 V 0.6 -0.2 V -0.3 V 0.4 -0.4 V -0.5 V -0.6 V 0.2 -0 0.5 -0.1 V 0.4 -0.2 V 0.3 -0.3 V -0.4 V 0.2 -0.5 V 0.1 -0.6 V -0.7 V 0.8 1 U421/423 Vishay Siliconix Gate Leakage Current T = 125_C 100 25_C 25_C GSS Drain-Gate Voltage (V) DG Output Characteristics -1.5 V GS(off -1.0 V ...

Page 4

... Drain Current (mA) D www.vishay.com 7-4 = 25_C UNLESS OTHERWISE NOTED -0.8 -1 U423 U421 1000 = -1 V 1000 Gate-Source Differential Voltage vs. Drain Current 100 25_C A U423 10 U421 1 10 100 I - Drain Current (mA) D Common Mode Rejection Ratio vs. Drain Current 130 DV DG CMRR = 20 log D 120 GS1 GS2 110 ...

Page 5

... UNLESS OTHERWISE NOTED MHz 0.8 0.6 0.4 0.2 0 -16 - kHz 1000 kHz 1000 U421/423 Vishay Siliconix Common-Source Reverse Feedback Capacitance vs. Gate-Source Voltage MHz -12 - Gate-Source Voltage (V) GS Equivalent Input Noise Voltage vs. Frequency 100 100 Frequency (Hz) On-Resistance and Output Conductance vs. Gate-Source Cutoff Voltage ...

Page 6

... Vishay disclaims any and all liability arising out of the use or application of any product described herein or of any information provided herein to the maximum extent permitted by law. The product specifications do not expand or otherwise modify Vishay’ ...

Related keywords