SST441-E3 Vishay, SST441-E3 Datasheet

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SST441-E3

Manufacturer Part Number
SST441-E3
Description
Manufacturer
Vishay
Datasheet

Specifications of SST441-E3

Channel Type
N
Configuration
Dual
Gate-source Voltage (max)
25V
Drain-gate Voltage (max)
-25V
Operating Temperature (min)
-55C
Operating Temperature (max)
150C
Operating Temperature Classification
Military
Mounting
Surface Mount
Lead Free Status / Rohs Status
Compliant
The SST441 is a monolithic high-speed dual JFET mounted in
a single SO-8 package. This JFET is an excellent choice for
use as wideband differential amplifiers in demanding test and
measurement applications.
Gate-Drain, Gate-Source Voltage
Gate Current
Lead Temperature (
Storage Temperature
For applications information see AN102.
Document Number: 70250
S-04031–Rev. E, 04-Jun-01
D Monolithic Design
D High Slew Rate
D Low Offset/Drift Voltage
D Low Gate Leakage: 1 pA
D Low Noise
D High CMRR: 90 dB
V
GS(off)
–1 to –6
(V)
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
1
V
/
16
(BR)GSS
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
” from case for 10 sec.)
–25
Min (V)
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Monolithic N-Channel JFET Dual
g
. . . . . . . . . . . . . . . . . . .
fs
D Tight Differential Match vs. Current
D Improved Op Amp Speed, Settling Time
D High-Speed Performance
D Minimum Input Error/Trimming Requirement
D Insignificant Signal Loss/Error Voltage
D High System Sensitivity
D Minimum Error with Large Input Signal
Min (mS)
Accuracy
4.5
NC
G
S
D
1
1
1
1
2
3
4
–55 to 150_C
Narrow Body SOIC
I
G
50 mA
300_C
–25 V
Typ (pA) |V
Top View
–1
The SO-8 package is available with tape-and-reel options to
support automated assembly (see Packaging Information).
For similar products in TO-71 packaging, see the U441 data
sheet.
Operating Junction Temperature
Power Dissipation :
Notes
a.
GS1
8
7
6
5
Derate 2.4 mW/_C above 25_C
– V
NC
G
D
S
2
2
2
GS2
20
|Max (mV)
Per Side
Total
D Wideband Differential Amps
D High-Speed,
D High Speed Comparators
D Impedance Converters
. . . . . . . . . . . . . . . . . . . . . . . . . .
a
Temp-Compensated,
Single-Ended Input Amps
. . . . . . . . . . . . . . . . . . . . . . . . . . .
a
. . . . . . . . . . . . . . . . . . . . . . . .
Vishay Siliconix
SST441
www.vishay.com
–55 to 150_C
300 mW
500 mW
8-1

Related parts for SST441-E3

SST441-E3 Summary of contents

Page 1

... D Insignificant Signal Loss/Error Voltage D High CMRR High System Sensitivity D Minimum Error with Large Input Signal The SST441 is a monolithic high-speed dual JFET mounted in a single SO-8 package. This JFET is an excellent choice for use as wideband differential amplifiers in demanding test and measurement applications. ...

Page 2

... SST441 Vishay Siliconix _ Parameter Symbol Static Gate-Source Breakdown Voltage V (BR)GSS Gate-Source Cutoff Voltage V b Saturation Drain Current Gate Reverse Current Gate Operating Current Gate-Source Forward Voltage V Dynamic Common-Source Forward Transconductance Common-Source Output Conductance Common-Source Forward Transconductance Common-Source Output Conductance Common-Source Input Capacitance ...

Page 3

... –0.4 V –0 –1 –1.6 V –2 –0.4 V –0 –0.8 V –1 –1 –1.4 V –1 0.8 1 SST441 Vishay Siliconix Gate Leakage Current 100 125_C GSS 125_C 100 25_C 25_C GSS – Drain-Gate Voltage (V) DG Output Characteristics V = –4 V GS(off) ...

Page 4

... SST441 Vishay Siliconix Transfer Characteristics –3 V GS(off –55_C A 12 25_C 8 125_C –0.5 –1.0 –1.5 V – Gate-Source Voltage (V) GS Voltage Differential with Temperature vs. Drain Current 100 125_C –55 to 25_C 0 – Drain Current (mA) D Circuit Voltage Gain vs. Drain Current 100 Assume GS(off) –4 V ...

Page 5

... kHz –55_C 8 4 125_C 250 kHz 200 150 100 125_C SST441 Vishay Siliconix Common-Source Reverse Feedback Capacitance vs. Gate-Source Voltage MHz –4 –8 –12 –16 V – Gate-Source Voltage (V) GS Equivalent Input Noise Voltage vs. Frequency 100 – Frequency (Hz) On-Resistance and Output Conductance vs ...

Page 6

... Vishay disclaims any and all liability arising out of the use or application of any product described herein or of any information provided herein to the maximum extent permitted by law. The product specifications do not expand or otherwise modify Vishay’ ...

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