J271 Vishay, J271 Datasheet
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Specifications of J271
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J271 Summary of contents
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... V Lead Temperature ( 30 V Power Dissipation –50 mA –55 to 150_C Notes –55 to 150_C a. Derate 2.8 mW/_C above 25_C J/SST270 Series Vishay Siliconix J270 J271 Min (mA) –2 –6 D High-Gain, Low-Noise Amplifiers D Low-Current, Low-Voltage Battery Amplifiers D Ultrahigh Input Impedance Pre-Amplifiers D High-Side Switching TO-236 (SOT-23 ...
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... J/SST270 Series Vishay Siliconix _ Parameter Static Gate-Source Breakdown Voltage Gate-Source Cutoff Voltage b Saturation Drain Current Gate Reverse Current Gate Operating Current Drain Cutoff Current Gate-Source Forward Voltage Dynamic Common-Source Forward Transconductance Common-Source Output Conductance Common-Source Input Capacitance Common-Source Reverse Transfer Capacitance ...
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... V = 1.5 V GS(off) –0.8 – 0 1 1.5 V 2.0 V –16 –20 – – –32 –24 –16 –8 0.8 1.0 J/SST270 Series Vishay Siliconix Output Characteristics 1 1 GS(off –0.1 –0.2 –0.3 –0.4 V – Drain-Source Voltage (V) DS Capacitance vs. Gate-Source Voltage MHz C iss C rss 6 0 ...
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... J/SST270 Series Vishay Siliconix Transconductance vs. Drain Current 100 GS(off 25_C 125_C 1 –0.1 –1 I – Drain Current (mA) D On-Resistance vs. Drain Current 250 T = 25_C A 200 V = 1.5 V GS(off) 150 3 V 100 50 0 –1 –10 I – Drain Current (mA) D Noise Voltage vs. Frequency 100 I = –0 –1 mA ...
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... Vishay disclaims any and all liability arising out of the use or application of any product described herein or of any information provided herein to the maximum extent permitted by law. The product specifications do not expand or otherwise modify Vishay’ ...