EESJ3D Omron, EESJ3D Datasheet - Page 2

• Manufacturer Part Number: EESJ3D
• Manufacturer: Omron
• Type: Transmissiver

Specifications of EESJ3D

• Number Of Elements: 1
• Output Device: Phototransistor
• Gap Width: 3.4mm
• Slit Width: 0.2mm
• Reverse Breakdown Voltage: 4V
• Collector-emitter Voltage: 30V
• Forward Current: 50mA
• Collector Current (dc) (max): 20mA
• Power Dissipation: 100mW
• Fall Time: 4000ns
• Rise Time: 4000ns
• Pin Count: 4
• Mounting: Through Hole
• Operating Temp Range: -25C to 85C
• Operating Temperature Classification: Commercial
• Lead Free Status / Rohs Status: Compliant

■ Engineering Data
172
Forward Current vs. Collector
Dissipation Temperature Rating
Light Current vs. Collector Emitter
Voltage Characteristics (EE-SJ3-G)
Response Time vs. Load Resist-
ance Characteristics (Typical)
Sensing Position Characteristics
(EE-SJ3-C)
Collector Emitter voltage V
Ambient temperature Ta ( C)
Load resistance R
Photomicrosensor (Transmissive)
P
I
F
C
Distance d (mm)
Center of optical axis
I
I
I
I
I
F
F
F
F
F
= 50 mA
= 40 mA
= 30 mA
= 20 mA
= 10 mA
I
V
Ta = 25 C
Ta = 25 C
F
L
V
Ta = 25 C
CE
= 20 mA
CC
(k )
= 10 V
= 5 V
CE
(V)
Relative Light Current vs. Ambi-
ent Temperature Characteristics
(Typical)
Forward Current vs. Forward
Voltage Characteristics (Typical)
Sensing Position Characteristics
(EE-SJ3-D)
Response Time Measurement
Circuit
Output
Input
Input
EE-SJ3 Series
Ambient temperature Ta ( C)
Forward voltage V
Distance d (mm)
Ta = 30 C
Ta = 25 C
Ta = 70 C
90 %
10 %
Center of optical axis
I
V
Ta = 25 C
F
CE
= 20 mA
I
V
F
F
CE
= 20 mA
= 10 V
Output
(V)
= 5 V
Light Current vs. Forward Current
Characteristics (Typical)
Dark Current vs. Ambient
Temperature Characteristics
(Typical)
Sensing Position Characteristics
(EE-SJ3-G)
Ambient temperature Ta ( C)
V
0 lx
Forward current I
CE
= 10 V
Distance d (mm)
Center of optical axis
Ta = 25 C
V
I
V
Ta = 25 C
F
F
CE
CE
= 20 mA
(mA)
= 10 V
= 10 V
d
+
0