TFDU6101E-TT4 Vishay, TFDU6101E-TT4 Datasheet
TFDU6101E-TT4
Specifications of TFDU6101E-TT4
Related parts for TFDU6101E-TT4
TFDU6101E-TT4 Summary of contents
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... TFDU6101E/TFDS6401/TFDS6501E/TFDT6501E Fast Infrared Transceiver Module Family (FIR, 4 Mbit/s) for 2 5.5 V Operation Description The TFDU6101E, TFDS6401, TFDT6501E are a family of low–power infrared transceiver modules compliant to the IrDA standard for fast infrared data communication, supporting IrDA speeds up to 4.0 Mbit/s (FIR), HP-SIR, Sharp ASK and carrier based remote control modes MHz ...
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... Vishay Semiconductors Package Options TFDU6101E Baby Face (Universal) weight 0.20 g Ordering Information Part Number Qty / Reel TFDU6101E–TR4 1000 pcs TFDU6101E–TT4 1000 pcs TFDS6401–TR3 1000 pcs TFDS6501E–TR4 750 pcs TFDT6501E–TR4 750 pcs Functional Block Diagram SD/Mode Txd www ...
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... TFDU6101E/TFDS6401/TFDS6501E/TFDT6501E Pin Description Pin Number “U” and “T” Option “S” Option “U” Option Baby Face (Universal) and Dracula IRED Detector 14885 Document Number 82525 Rev. B1.6, 02–Nov–00 Function Function Descri tion Description IRED Anode IRED anode externally connected to V through a current control resistor ...
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... TFDU6101E/TFDS6401/TFDS6501E/TFDT6501E Vishay Semiconductors Absolute Maximum Ratings Reference point Pin: GND unless otherwise noted. Typical values are for DESIGN AID ONLY, not guaranteed nor subject to production testing. Parameters Supply Voltage Range <V Transceiver Supply Voltage Range <V Transmitter Input Currents For all Pins, Except IRED ...
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... TFDU6101E/TFDS6401/TFDS6501E/TFDT6501E Electrical Characteristics 2.6V to 5.5 V unless otherwise noted. amb CC Typical values are for DESIGN AID ONLY, not guaranteed nor subject to production testing. Parameters Test Conditions / Pins Transceiver Supply Voltage Dynamic Supply Current Receive mode only. In transmit mode, add additional 85 mA (typ) for IRED current ...
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... Mbit/s = 850 nm to 900 nm Minimum Detection TFDS6501E/ TFDT6501E Threshold Irradiance, 4.0 Mbit/s FIR Mode FIR Mode = 850 nm to 900 nm TFDU6101E, TFDS6401 4.0 Mbit/s = 850 nm to 900 nm Maximum Detection = 850 nm to 900 nm Threshold Irradiance Logic LOW Receiver Input Irradiance Rise Time of Output 10% to 90%, @2 Signal– ...
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... TFDU6101E/TFDS6401/TFDS6501E/TFDT6501E Optoelectronic Characteristics (continued 2 5.5 V unless otherwise noted. amb CC Typical values are for DESIGN AID ONLY, not guaranteed nor subject to production testing. Parameters Transmitter IRED Operating Current R1*) = 7.2 Output Radiant Intensity (see Figure 3) Txd = High Low 7.2 Output Radiant Intensity ...
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... TFDU6101E/TFDS6401/TFDS6501E/TFDT6501E Vishay Semiconductors Recommended Circuit Diagram The only required component for designing an IrDA 1.3 solution using Vishay transceivers is a current limiting resistor, R1, to the IRED. However, depending on the entire system design and board layout, additional components may be required (see figure KEIN MERKER). ...
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... HP/ Sharp settings can be selected. The Microsoft , min Operating Windows 2000 provide Miniport device drivers. Mode Switching The TFDU6101E, TFDS6401, TFDS6501E and , max.V TFDT6501E do not power on with a default mode, dson F therefore the data transfer rate has to be set by a programming sequence using the Txd and SD/ Mode ...
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... Txd, which determines speed setting). 4. Txd must be held for t Txd is now enabled as normal Txd input for the lower 200 ns. bandwidth mode 16524 Figure 7. TFDU6101E BabyFace (Universal) Figure 8. TFDS6401 (Dracula) 200 ns. h 0 Document Number 82525 Rev. B1.6, 02–Nov–00 ...
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... TFDU6101E/TFDS6401/TFDS6501E/TFDT6501E 1.1 1.0 15069 Pad 1 is longer to designate Pin 1 connection to transceiver. Pad 1 is longer to designate Pin 1 connection to transceiver. Note: Leads of the device should be at least 0.3 mm within the ends of the pads. Recommended Solder Profile 240 210 C/s 180 150 120 120 - 180 max ...
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... TFDU6101E/TFDS6401/TFDS6501E/TFDT6501E Vishay Semiconductors TFDU6101E – Baby Face (Universal) Package (Mechanical Dimensions) www.vishay.com 12 (17) 12249 Document Number 82525 Rev. B1.6, 02–Nov–00 ...
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... TFDU6101E/TFDS6401/TFDS6501E/TFDT6501E TFDS6401 Package (Mechanical Dimensions) Document Number 82525 Rev. B1.6, 02–Nov–00 Vishay Semiconductors 15971 www.vishay.com 13 (17) ...
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... TFDU6101E/TFDS6401/TFDS6501E/TFDT6501E Vishay Semiconductors TFDS6501E – Side View Package (Mechanical Dimensions) www.vishay.com 14 (17) 14322 Document Number 82525 Rev. B1.6, 02–Nov–00 ...
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... TFDU6101E/TFDS6401/TFDS6501E/TFDT6501E TFDT6501E – Top View Package (Mechanical Dimensions) Document Number 82525 Rev. B1.6, 02–Nov–00 Vishay Semiconductors 14325 www.vishay.com 15 (17) ...
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... TFDU6101E/TFDS6401/TFDS6501E/TFDT6501E Vishay Semiconductors Revision History: B1.1, 01/03/1999: New edition for optimized E family. TFDxxx01E – RXD output is grounded when the device is switched to shutdown mode. B1.2, 15/03/1999: A clean tri-state version with floating output in shutdown mode was added as 02 version. The output radiant intensity was increased. ...
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... TFDU6101E/TFDS6401/TFDS6501E/TFDT6501E Ozone Depleting Substances Policy Statement It is the policy of Vishay Semiconductor GmbH to 1. Meet all present and future national and international statutory requirements. 2. Regularly and continuously improve the performance of our products, processes, distribution and operating systems with respect to their impact on the health and safety of our employees and the public, as well as their impact on the environment ...
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... Vishay disclaims any and all liability arising out of the use or application of any product described herein or of any information provided herein to the maximum extent permitted by law. The product specifications do not expand or otherwise modify Vishay’ ...