MT4HTF6464AY-53EE1 Micron Technology Inc, MT4HTF6464AY-53EE1 Datasheet - Page 13

• Manufacturer Part Number: MT4HTF6464AY-53EE1
• Manufacturer: Micron Technology Inc

Specifications of MT4HTF6464AY-53EE1

• Main Category: DRAM Module
• Sub-category: DDR2 SDRAM
• Module Type: 240UDIMM
• Device Core Size: 64b
• Organization: 64Mx64
• Total Density: 512MByte
• Chip Density: 1Gb
• Access Time (max): 50ps
• Maximum Clock Rate: 533MHz
• Operating Supply Voltage (typ): 1.8V
• Operating Current: 720mA
• Number Of Elements: 4
• Operating Supply Voltage (max): 1.9V
• Operating Supply Voltage (min): 1.7V
• Operating Temp Range: 0C to 85C
• Operating Temperature Classification: Commercial
• Pin Count: 240
• Mounting: Socket
• Lead Free Status / Rohs Status: Compliant

Table 11: DDR2 I
Values shown for MT47H32M16 DDR2 SDRAM only and are computed from values specified in the 512Mb (32 Meg x 16)
component data sheet
PDF: 09005aef80ed6fda
htf4c16_32_64x64ay – Rev. H 3/10 EN
Parameter
Operating bank interleave read current: All device banks interleaving
reads; I
=
HIGH, S# is HIGH between valid commands; Address bus inputs are stable
during deselects; Data bus inputs are switching
t
CK (I
OUT
DD
),
= 0mA; BL = 4, CL = CL (I
t
RC =
t
RC (I
DD
DD
Specifications and Conditions – 256MB (Continued)
),
t
RRD =
128MB, 256MB, 512MB (x64, SR) 240-Pin DDR2 SDRAM UDIMM
t
RRD (I
DD
), AL =
DD
),
t
t
RCD (I
RCD =
DD
t
RCD (I
) - 1 ×
DD
13
t
CK (I
); CKE is
DD
);
t
CK
Micron Technology, Inc. reserves the right to change products or specifications without notice.
Symbol
I
DD7
-80E/
1480
-800
1400
-667
© 2003 Micron Technology, Inc. All rights reserved.
I
DD
1360
-53E
Specifications
-40E
1360
Units
mA