MT9HTF12872AY-800E1 Micron Technology Inc, MT9HTF12872AY-800E1 Datasheet - Page 3

MT9HTF12872AY-800E1

Manufacturer Part Number
MT9HTF12872AY-800E1
Description
Manufacturer
Micron Technology Inc
Datasheet

Specifications of MT9HTF12872AY-800E1

Main Category
DRAM Module
Sub-category
DDR2 SDRAM
Module Type
240RDIMM
Device Core Size
72b
Organization
128Mx72
Total Density
1GByte
Chip Density
1Gb
Access Time (max)
40ps
Maximum Clock Rate
800MHz
Operating Supply Voltage (typ)
1.8V
Operating Current
1.71A
Number Of Elements
9
Operating Supply Voltage (max)
1.9V
Operating Supply Voltage (min)
1.7V
Operating Temp Range
0C to 85C
Operating Temperature Classification
Commercial
Pin Count
240
Mounting
Socket
Lead Free Status / Rohs Status
Compliant
Table 5: Part Numbers and Timing Parameters – 1GB
Base device: MT47H128M8,
PDF: 09005aef80e8ad4d
htf9c32_64_128x72ay – Rev. F 3/10 EN
Part Number
MT9HTF12872A(I)Y-80E__
MT9HTF12872A(I)Y-800__
MT9HTF12872A(I)Y-667__
MT9HTF12872A(I)Y-53E__
MT9HTF12872A(I)Y-40E__
Notes:
1. The data sheet for the base device can be found on Micron’s Web site.
2. All part numbers end with a two-place code (not shown) that designates component and PCB revisions.
Consult factory for current revision codes. Example: MT9HTF6472AY-667C2.
2
1
1Gb DDR2 SDRAM
Module
Density
1GB
1GB
1GB
1GB
1GB
256MB, 512MB, 1GB (x72, SR, ECC) 240-Pin DDR2 UDIMM
Configuration
128 Meg x 72
128 Meg x 72
128 Meg x 72
128 Meg x 72
128 Meg x 72
3
Bandwidth
Module
6.4 GB/s
6.4 GB/s
5.3 GB/s
4.3 GB/s
3.2 GB/s
Micron Technology, Inc. reserves the right to change products or specifications without notice.
Memory Clock/
3.75ns/533 MT/s
2.5ns/800 MT/s
2.5ns/800 MT/s
3.0ns/667 MT/s
5.0ns/400 MT/s
Data Rate
© 2003 Micron Technology, Inc. All rights reserved.
(CL-
Clock Cycles
t
Features
5-5-5
6-6-6
5-5-5
4-4-4
3-3-3
RCD-
t
RP)

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