MT4HTF6464AY-800E1 Micron Technology Inc, MT4HTF6464AY-800E1 Datasheet - Page 15
![](/photos/31/34/313449/240pin_udimm_sml.jpg)
MT4HTF6464AY-800E1
Manufacturer Part Number
MT4HTF6464AY-800E1
Description
Manufacturer
Micron Technology Inc
Datasheet
1.MT4HTF6464AY-800E1.pdf
(19 pages)
Specifications of MT4HTF6464AY-800E1
Main Category
DRAM Module
Sub-category
DDR2 SDRAM
Module Type
240UDIMM
Device Core Size
64b
Organization
64Mx64
Total Density
512MByte
Chip Density
1Gb
Access Time (max)
40ps
Maximum Clock Rate
800MHz
Operating Supply Voltage (typ)
1.8V
Operating Current
1.28A
Number Of Elements
4
Operating Supply Voltage (max)
1.9V
Operating Supply Voltage (min)
1.7V
Operating Temp Range
0C to 85C
Operating Temperature Classification
Commercial
Pin Count
240
Mounting
Socket
Lead Free Status / Rohs Status
Compliant
Table 12: DDR2 I
Values shown for MT47H64M16 DDR2 SDRAM only and are computed from values specified in the 1Gb (64 Meg x 16) com-
ponent data sheet
PDF: 09005aef80ed6fda
htf4c16_32_64x64ay – Rev. H 3/10 EN
Parameter
Operating bank interleave read current: All device banks interleaving
reads; I
=
HIGH, S# is HIGH between valid commands; Address bus inputs are stable
during deselects; Data bus inputs are switching
t
CK (I
OUT
DD
),
= 0mA; BL = 4, CL = CL (I
t
RC =
t
RC (I
DD
DD
Specifications and Conditions (Die Revision A) – 512MB (Continued)
),
t
RRD =
128MB, 256MB, 512MB (x64, SR) 240-Pin DDR2 SDRAM UDIMM
t
RRD (I
DD
), AL =
DD
),
t
t
RCD (I
RCD =
DD
t
RCD (I
) - 1 ×
DD
15
t
CK (I
); CKE is
DD
);
t
CK
Micron Technology, Inc. reserves the right to change products or specifications without notice.
Symbol
I
DD7
-80E/
1760
-800
1400
-667
© 2003 Micron Technology, Inc. All rights reserved.
I
DD
1360
-53E
Specifications
-40E
1320
Units
mA