MT48H16M32LFCM-75 IT:A Micron Technology Inc, MT48H16M32LFCM-75 IT:A Datasheet - Page 29
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MT48H16M32LFCM-75 IT:A
Manufacturer Part Number
MT48H16M32LFCM-75 IT:A
Description
Manufacturer
Micron Technology Inc
Type
Mobile SDRAMr
Datasheet
1.MT48H16M32LFCM-75_ITA.pdf
(86 pages)
Specifications of MT48H16M32LFCM-75 IT:A
Organization
16Mx32
Density
512Mb
Address Bus
15b
Access Time (max)
8/5.4ns
Maximum Clock Rate
133MHz
Operating Supply Voltage (typ)
1.8V
Package Type
VFBGA
Operating Temp Range
-40C to 85C
Operating Supply Voltage (max)
1.95V
Operating Supply Voltage (min)
1.7V
Supply Current
95mA
Pin Count
90
Mounting
Surface Mount
Operating Temperature Classification
Industrial
Lead Free Status / Rohs Status
Compliant
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READ
Figure 9: READ Command
PDF: 09005aef82ea3742
512mb_mobile_sdram_y47m.pdf – Rev. H 12/09 EN
Note:
The READ command is used to initiate a burst read access to an active row. The values
on the BA0 and BA1 inputs select the bank; the address provided selects the starting
column location. The value on input A10 determines whether auto precharge is used. If
auto precharge is selected, the row being accessed is precharged at the end of the READ
burst; if auto precharge is not selected, the row remains open for subsequent accesses.
Read data appears on the DQ subject to the logic level on the DQM inputs two clocks
earlier. If a given DQM signal was registered HIGH, the corresponding DQ will be High-
Z two clocks later; if the DQM signal was registered LOW, the DQ will provide valid data.
BA0, BA1
Address
1. EN AP = enable auto precharge, DIS AP = disable auto precharge.
RAS#
CAS#
A10
WE#
CKE
CLK
CS#
1
HIGH
512Mb: 32 Meg x 16, 16 Meg x 32 Mobile SDRAM
Column address
Bank address
DIS AP
EN AP
29
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Micron Technology, Inc. reserves the right to change products or specifications without notice.
© 2007 Micron Technology, Inc. All rights reserved.
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