MT48H16M32LFCM-6 AT:B Micron Technology Inc, MT48H16M32LFCM-6 AT:B Datasheet - Page 81

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MT48H16M32LFCM-6 AT:B

Manufacturer Part Number
MT48H16M32LFCM-6 AT:B
Description
Manufacturer
Micron Technology Inc
Datasheet

Specifications of MT48H16M32LFCM-6 AT:B

Lead Free Status / Rohs Status
Compliant
Deep Power-Down
PDF: 09005aef82ea3742
512mb_mobile_sdram_y47m.pdf - Rev. G 08/09 EN
Deep power-down mode is a maximum power-saving feature achieved by shutting off
the power to the entire device memory array. Data on the memory array will not be re-
tained after deep power-down mode is executed. Deep power-down mode is entered by
having all banks idle, with CS# and WE# held LOW with RAS# and CAS# HIGH at the
rising edge of the clock, while CKE is LOW. CKE must be held LOW during deep power-
down.
To exit deep power-down mode, CKE must be asserted HIGH. Upon exiting deep power-
down mode, a full initialization sequence is required.
512Mb: 32 Meg x 16, 16 Meg x 32 Mobile SDRAM
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Micron Technology, Inc. reserves the right to change products or specifications without notice.
©2007 Micron Technology, Inc. All rights reserved.
Deep Power-Down

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