MT47H128M4CF-25E:G Micron Technology Inc, MT47H128M4CF-25E:G Datasheet - Page 113
MT47H128M4CF-25E:G
Manufacturer Part Number
MT47H128M4CF-25E:G
Description
IC SDRAM 512MB 800MHZ 60FBGA
Manufacturer
Micron Technology Inc
Series
-r
Specifications of MT47H128M4CF-25E:G
Format - Memory
RAM
Memory Type
DDR2 SDRAM
Memory Size
512M (128Mx4)
Speed
2.5ns
Interface
Parallel
Voltage - Supply
1.7 V ~ 1.9 V
Operating Temperature
0°C ~ 85°C
Package / Case
60-TFBGA
Lead Free Status / Rohs Status
Compliant
Available stocks
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Part Number
Manufacturer
Quantity
Price
Company:
Part Number:
MT47H128M4CF-25E:G
Manufacturer:
Micron Technology Inc
Quantity:
10 000
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SELF REFRESH
PDF: 09005aef82f1e6e2
512MbDDR2.pdf - Rev. Q 10/10 EN
The SELF REFRESH command is initiated when CKE is LOW. The differential clock
should remain stable and meet
refresh mode. The procedure for exiting self refresh requires a sequence of commands.
First, the differential clock must be stable and meet
prior to CKE going back to HIGH. Once CKE is HIGH (
with three clock registrations), the DDR2 SDRAM must have NOP or DESELECT com-
mands issued for
ments is used to apply NOP or DESELECT commands for 200 clock cycles before
applying any other command.
t
XSNR. A simple algorithm for meeting both refresh and DLL require-
113
t
CKE specifications at least 1 ×
Micron Technology, Inc. reserves the right to change products or specifications without notice.
512Mb: x4, x8, x16 DDR2 SDRAM
t
CK specifications at least 1 ×
t
CKE [MIN] has been satisfied
© 2004 Micron Technology, Inc. All rights reserved.
t
CK after entering self
SELF REFRESH
t
CK
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