CAT5251YI-00-T2 ON Semiconductor, CAT5251YI-00-T2 Datasheet - Page 5

• Manufacturer Part Number: CAT5251YI-00-T2
• Description: IC POT DPP 100K 256TAP 24TSSOP
• Manufacturer: ON Semiconductor

Specifications of CAT5251YI-00-T2

• Taps: 256
• Resistance (ohms): 100K
• Number Of Circuits: 4
• Temperature Coefficient: 300 ppm/°C Typical
• Memory Type: Non-Volatile
• Interface: SPI Serial
• Voltage - Supply: 2.5 V ~ 6 V
• Operating Temperature: -40°C ~ 85°C
• Mounting Type: Surface Mount
• Package / Case: 24-TSSOP
• Resistance In Ohms: 100K
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

3. This parameter is tested initially and after a design or process change that affects the parameter.
4. Absolute linearity is utilized to determine actual wiper voltage versus expected voltage as determined by wiper position when used as a
5. Relative linearity is utilized to determine the actual change in voltage between two successive tap positions when used as a potentiometer.
6. LSB = R
7. n = 0, 1, 2, ..., 255.
Table 3. RECOMMENDED OPERATING CONDITIONS
Table 4. POTENTIOMETER CHARACTERISTICS
Table 5. D.C. OPERATING CHARACTERISTICS
C
V
Operating Ambient Temperature (Industrial)
Symbol
TC
Symbol
TC
potentiometer.
It is a measure of the error in step size.
H
CC
V
V
V
R
R
I
I
/C
V
TERM
CC1
CC2
I
I
V
R
OH1
V
I
OL1
I
RATIO
SB
LO
POT
POT
RPOT
fc
LI
W
IH
IL
W
N
L
/C
W
TOT
Potentiometer Resistance (−00)
Potentiometer Resistance (−50)
Potentiometer Resistance Tolerance
R
Power Rating
Wiper Current
Wiper Resistance
Voltage on any R
Noise
Resolution
Absolute Linearity (Note 4)
Relative Linearity (Note 5)
Temperature Coefficient of R
Ratiometric Temp. Coefficient
Potentiometer Capacitances
Frequency Response
Power Supply Current
Power Supply Current
Non−volatile Write
Standby Current (V
Input Leakage Current
Output Leakage Current
Input Low Voltage
Input High Voltage
Output Low Voltage (V
Output High Voltage (V
/ 255 or (R
POT
Matching
H
Parameter
− R
Parameter
L
H
) / 255, single pot
or R
CC
= 5.0 V)
CC
CC
L
Parameter
Pin
= 3 V)
= 6 V)
POT
f
V
f
V
V
V
V
I
I
SCK
SCK
OL
OH
CC
CC
IN
IN
OUT
(Over recommended operating conditions unless otherwise stated.)
= 3 mA
http://onsemi.com
= GND or V
= GND to V
= −1.6 mA
(Over recommended operating conditions unless otherwise stated.)
= 6 V Inputs = GND
= 6 V Inputs = GND
= 2.5 MHz, SO Open
= 2.5 MHz, SO = Open
= GND to V
Test Conditions
R
I
I
W
W
W(n)(actual)
R
R
POT
= ±3 mA @ V
= ±3 mA @ V
W(n+1)
Test Conditions
5
25°C, each pot
CC
CC
= 50 kW (Note 3)
V
CC
(Note 3)
(Note 7)
(Note 7)
(Note 3)
(Note 3)
(Note 3)
; SO Open
SS
− [R
− R
= 0 V
W(n)+LSB
(n)(expected)
CC
CC
= 3 V
= 5 V
]
V
V
CC
CC
Min
GND
−1
Min
x 0.7
− 0.8
+2.5 V to +6
−40 to +85
Ratings
10/10/25
Typ
±300
Typ
100
200
100
0.4
0.4
50
V
V
CC
CC
Max
0.4
10
10
1
5
1
Max
±0.5
V
±20
300
150
x 0.3
+ 1.0
50
±3
±1
20
1
CC
Units
°C
(Note 6)
(Note 6)
V
nV/√Hz
ppm/°C
ppm/°C
Units
Units
MHz
LSB
LSB
mW
mA
kW
kW
mA
mA
pF
mA
mA
mA
%
%
%
W
W
V
V
V
V
V