CAT5113YI-01-GT3 ON Semiconductor, CAT5113YI-01-GT3 Datasheet - Page 5

• Manufacturer Part Number: CAT5113YI-01-GT3
• Description: IC POT DIGITL 1K 100TAP 8TSSOP
• Manufacturer: ON Semiconductor

Specifications of CAT5113YI-01-GT3

• Taps: 100
• Resistance (ohms): 1K
• Number Of Circuits: 1
• Temperature Coefficient: 300 ppm/°C Typical
• Memory Type: Non-Volatile
• Interface: Up/Down
• Voltage - Supply: 2.5 V ~ 6 V
• Operating Temperature: -40°C ~ 85°C
• Mounting Type: Surface Mount
• Package / Case: 8-TSSOP
• Resistance In Ohms: 1.00K
• Number Of Elements: 1
• # Of Taps: 100
• Resistance (max): 1KOhm
• Power Supply Requirement: Single
• Interface Type: Serial (3-Wire)
• Single Supply Voltage (typ): 3.3/5V
• Dual Supply Voltage (typ): Not RequiredV
• Single Supply Voltage (min): 2.5V
• Single Supply Voltage (max): 6V
• Dual Supply Voltage (min): Not RequiredV
• Dual Supply Voltage (max): Not RequiredV
• Operating Temp Range: -40C to 85C
• Operating Temperature Classification: Industrial
• Mounting: Surface Mount
• Pin Count: 8
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

3. Latch−up protection is provided for stresses up to 100 mA on address and data pins from −1 V to V
4. This parameter is not 100% tested.
Table 4. DC ELECTRICAL CHARACTERISTICS
POWER SUPPLY
LOGIC INPUTS
POTENTIOMETER CHARACTERISTICS
I
SB1
C
Symbol
TC
TC
H
R
I
I
V
V
V
DNL
/C
(Note 3)
V
CC1
CC2
V
R
V
INL
I
I
I
RATIO
IH
IH2
POT
RPOT
CC
IL
IL2
fc
RH
W
RL
WI
N
L
/C
W
Noise
Operating Voltage Range
Supply Current (Increment)
Supply Current (Write)
Supply Current (Standby)
Input Leakage Current
Input Leakage Current
CMOS High Level Input Voltage
CMOS Low Level Input Voltage
Potentiometer Resistance
Pot. Resistance Tolerance
Voltage on R
Voltage on R
Resolution
Integral Linearity Error
Differential Linearity Error
Wiper Resistance
Wiper Current
TC of Pot Resistance
Ratiometric TC
Potentiometer Capacitances
Frequency Response
Parameter
H
L
pin
pin
100 kHz / 1 kHz
V
V
Programming, V
V
CS = V
U/D, INC = V
V
V
2.5 V ≤ V
−01 Device
−10 Device
−50 Device
−00 Device
I
I
V
V
(Note 4)
Passive Attenuator, 10 kW
W
W
(V
CC
CC
CC
IN
IN
CC
CC
http://onsemi.com
≤ 2 mA
≤ 2 mA
CC
= V
= 0 V
= 6 V, f = 1 MHz, I
= 6 V, f = 250 kHz, I
= 3 V
= 5 V, I
= 2.5 V, I
= +2.5 V to +6 V unless otherwise specified)
CC
CC
CC
Conditions
− 0.3 V
W
≤ 6 V
5
CC
W
= 1 mA
= 1 mA
CC
− 0.3 V or GND
= 6 V
W
W
= 0
= 0
V
CC
−0.3
Min
−4.4
2.5
–
–
–
–
–
–
–
0
0
x 0.7
CC
+ 1 V
8/8/25
0.01
8/24
Typ
0.25
100
300
0.5
1.7
10
50
–
–
–
–
–
–
–
–
–
1
1
V
V
CC
CC
1000
Max
1000
100
500
−10
V
V
6.0
±20
400
50
10
0.5
4.4
20
1
+ 0.3
CC
CC
1
x 0.2
nV/√Hz
ppm/°C
ppm/°C
Units
MHz
LSB
LSB
mA
mA
mA
mA
mA
mA
mA
mA
kW
pF
V
V
V
%
%
W
W
V
V