MCP4132T-103E/SN Microchip Technology, MCP4132T-103E/SN Datasheet - Page 8
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MCP4132T-103E/SN
Manufacturer Part Number
MCP4132T-103E/SN
Description
IC RHEO DGTL SNGL 10K SPI 8SOIC
Manufacturer
Microchip Technology
Specifications of MCP4132T-103E/SN
Package / Case
8-SOIC (3.9mm Width)
Taps
129
Resistance (ohms)
10K
Number Of Circuits
1
Temperature Coefficient
150 ppm/°C Typical
Memory Type
Volatile
Interface
SPI Serial
Voltage - Supply
1.8 V ~ 5.5 V
Operating Temperature
-40°C ~ 125°C
Mounting Type
Surface Mount
Resistance In Ohms
10K
Number Of Pots
Single
Taps Per Pot
128
Resistance
10 KOhms
Wiper Memory
Volatile
Digital Interface
Serial (SPI)
Operating Supply Voltage
2.5 V, 3.3 V, 5 V
Supply Current
1 mA
Maximum Operating Temperature
+ 125 C
Minimum Operating Temperature
- 40 C
Mounting Style
SMD/SMT
Supply Voltage (max)
5.5 V
Supply Voltage (min)
1.8 V
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Company:
Part Number:
MCP4132T-103E/SN
Manufacturer:
MICROCHIP
Quantity:
12 000
MCP413X/415X/423X/425X
AC/DC CHARACTERISTICS (CONTINUED)
DS22060B-page 8
DC Characteristics
Rheostat
Differential
Non-linearity
MCP41X1
(Note 4, Note 8)
MCP4XX2
devices only
(Note 4)
Capacitance (P
Capacitance (P
Capacitance (P
Note 1:
Parameters
2:
3:
4:
5:
6:
7:
8:
9:
10: Supply current is independent of current through the resistor network.
Resistance is defined as the resistance between terminal A to terminal B.
INL and DNL are measured at V
MCP4XX1 only.
MCP4XX2 only, includes V
Resistor terminals A, W and B’s polarity with respect to each other is not restricted.
This specification by design.
Non-linearity is affected by wiper resistance (R
temperature.
The MCP4XX1 is externally connected to match the configurations of the MCP41X2 and MCP42X2, and
then tested.
POR/BOR is not rate dependent.
A
w
B
)
)
)
R-DNL
Sym
C
C
C
AW
BW
W
Standard Operating Conditions (unless otherwise specified)
Operating Temperature
All parameters apply across the specified operating ranges unless noted.
V
Typical specifications represent values for V
DD
-0.375
-0.375
-0.375
-0.375
-0.375
-0.375
WZSE
-0.75
-0.75
Min
-0.5
-1.0
-0.5
-1.0
-0.5
-0.5
-0.5
-0.5
—
—
—
= +2.7V to 5.5V, 5 kΩ, 10 kΩ, 50 kΩ, 100 kΩ devices.
W
and V
with V
±0.25
±0.25
±0.25
+0.25
±0.25
±0.25
±0.25
±0.25
±0.25
±0.25
±0.25
±0.25
±0.25
+0.5
+0.5
+0.5
Typ
120
Section 2.0
Section 2.0
Section 2.0
Section 2.0
Section 2.0
Section 2.0
Section 2.0
WFSE
75
75
A
= V
.
DD
+0.375
+0.375
+0.375
+0.375
+0.375
+0.375
W
+0.75
+0.75
Max
+0.5
+1.0
+0.5
+1.0
+0.5
+0.5
+0.5
+0.5
), which changes significantly over voltage and
—
—
—
and V
–40°C ≤ T
B
= V
Units
LSb
LSb
LSb
LSb
LSb
LSb
LSb
LSb
LSb
LSb
LSb
LSb
LSb
LSb
LSb
LSb
pF
pF
pF
SS
.
A
5 kΩ
10 kΩ
50 kΩ
100 kΩ 8-bit
f =1 MHz, Code = Full-Scale
f =1 MHz, Code = Full-Scale
f =1 MHz, Code = Full-Scale
≤ +125°C (extended)
DD
= 5.5V, T
8-bit
7-bit
8-bit
7-bit
8-bit
7-bit
7-bit
© 2008 Microchip Technology Inc.
Conditions
A
5.5V, I
3.0V (Note 7)
1.8V
5.5V, I
3.0V (Note 7)
1.8V
5.5V, I
3.0V (Note 7)
1.8V
5.5V, I
3.0V (Note 7)
1.8V
5.5V, I
3.0V (Note 7)
1.8V
5.5V, I
3.0V (Note 7)
1.8V
5.5V, I
3.0V (Note 7)
1.8V
5.5V, I
3.0V (Note 7)
1.8V
= +25°C.
W
W
W
W
W
W
W
W
= 900 µA
= 900 µA
= 450 µA
= 450 µA
= 90 µA
= 90 µA
= 45 µA
= 45 µA