MCP4362-104E/ST Microchip Technology, MCP4362-104E/ST Datasheet - Page 8
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MCP4362-104E/ST
Manufacturer Part Number
MCP4362-104E/ST
Description
IC DIGITAL POTENTIOMETER 14TSSOP
Manufacturer
Microchip Technology
Series
WiperLock™r
Datasheet
1.MCP4361-503EML.pdf
(80 pages)
Specifications of MCP4362-104E/ST
Taps
257
Resistance (ohms)
100K
Number Of Circuits
4
Temperature Coefficient
150 ppm/°C Typical
Memory Type
Non-Volatile
Interface
SPI Serial
Voltage - Supply
2.7 V ~ 5.5 V
Operating Temperature
-40°C ~ 125°C
Mounting Type
Surface Mount
Package / Case
14-TSSOP
Resistance In Ohms
100K
End To End Resistance
100kohm
Track Taper
Linear
Resistance Tolerance
± 20%
No. Of Steps
257
Supply Voltage Range
2.7V To 5.5V
Control Interface
Serial, SPI
No. Of Pots
Quad
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Company:
Part Number:
MCP4362-104E/ST
Manufacturer:
Microchip
Quantity:
422
Part Number:
MCP4362-104E/ST
Manufacturer:
MICROCHIP/微芯
Quantity:
20 000
MCP434X/436X
AC/DC CHARACTERISTICS (CONTINUED)
DS22233A-page 8
DC Characteristics
Rheostat Integral
Non-linearity
MCP43X1
(Note 4, Note 8)
MCP43X2 devices
only (Note 4)
Note 1:
Parameters
2:
3:
4:
5:
6:
7:
8:
9:
10: Supply current is independent of current through the resistor network.
Resistance is defined as the resistance between terminal A to terminal B.
INL and DNL are measured at V
MCP43X1 only.
MCP43X2 only, includes V
Resistor terminals A, W and B’s polarity with respect to each other is not restricted.
This specification by design.
Non-linearity is affected by wiper resistance (R
temperature.
The MCP43X1 is externally connected to match the configurations of the MCP43X2, and then tested.
POR/BOR is not rate dependent.
R-INL
Sym
Standard Operating Conditions (unless otherwise specified)
Operating Temperature
All parameters apply across the specified operating ranges unless noted.
V
Typical specifications represent values for V
DD
-1.125
-1.125
-1.125
-1.125
WZSE
-8.25
Min
-1.5
-6.0
-1.5
-5.5
-4.0
-1.5
-2.0
-1.5
-1.0
-1.5
-0.8
= +2.7V to 5.5V, 5 kΩ, 10 kΩ, 50 kΩ, 100 kΩ devices.
W
and V
with V
+0.25
+0.25
±0.5
+4.5
±0.5
+4.5
±0.5
+2.5
±0.5
+2.5
±0.5
±0.5
±0.5
±0.5
Typ
WFSE
+1
+1
A
= V
.
DD
+1.125
+1.125
+1.125
+1.125
W
+8.25
Max
+1.5
+6.0
+1.5
+5.5
+4.0
+1.5
+2.0
+1.5
+1.0
+1.5
+0.8
), which changes significantly over voltage and
and V
–40°C ≤ T
B
= V
Units
LSb
LSb
LSb
LSb
LSb
LSb
LSb
LSb
LSb
LSb
LSb
LSb
LSb
LSb
LSb
LSb
SS
.
A
5 kΩ
10 kΩ
50 kΩ
100 kΩ 8-bit
≤ +125°C (extended)
DD
= 5.5V, T
8-bit
7-bit
8-bit
7-bit
8-bit
7-bit
7-bit
© 2009 Microchip Technology Inc.
Conditions
A
5.5V, I
3.0V, I
(Note 7)
5.5V, I
3.0V, I
(Note 7)
5.5V, I
3.0V, I
(Note 7)
5.5V, I
3.0V, I
(Note 7)
5.5V, I
3.0V, I
(Note 7)
5.5V, I
3.0V, I
(Note 7)
5.5V, I
3.0V, I
(Note 7)
5.5V, I
3.0V, I
(Note 7)
= +25°C.
W
W
W
W
W
W
W
W
W
W
W
W
W
W
W
W
= 900 µA
= 480 µA
= 900 µA
= 480 µA
= 450 µA
= 240 µA
= 450 µA
= 240 µA
= 90 µA
= 48 µA
= 90 µA
= 48 µA
= 45 µA
= 24 µA
= 45 µA
= 24 µA