NBXSBA031LNHTAG ON Semiconductor, NBXSBA031LNHTAG Datasheet - Page 3

• Manufacturer Part Number: NBXSBA031LNHTAG
• Description: IC CRYSTAL OSC SGL FREQ 6CLCC
• Manufacturer: ON Semiconductor

Specifications of NBXSBA031LNHTAG

• Package / Case: 6-CLCC
• Voltage - Supply: *
• Frequency: *
• Operating Temperature: *
• Count: *
• Frequency Stability: +/- 50 PPM
• Termination Style: SMD/SMT
• Supply Voltage: 4.6 Volts
• Supply Voltage (max): 4.6 Volts
• Output Format: LVPECL
• Dimensions: 5 mm W x 7 mm L x 1.8 mm H
• Minimum Operating Temperature: - 40 C
• Maximum Operating Temperature: + 85 C
• Duty Cycle (max): 50 %
• Mounting Style: SMD/SMT
• Product: XO
• Height: 1.8 mm
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

NOTE: Device will meet the specifications after thermal equilibrium has been established when mounted in a test socket or printed circuit
2. Measurement taken with outputs terminated with 50 W to V
NOTE: Device will meet the specifications after thermal equilibrium has been established when mounted in a test socket or printed circuit
3. Measurement taken with outputs terminated with 50 W to V
4. Parameter guarantees 10 years of aging. Includes initial stability at 25°C, shock, vibration, and first year aging.
5. Guaranteed by design and verified at qualification. Not tested in production.
Table 5. DC CHARACTERISTICS
Table 6. AC CHARACTERISTICS
t
DUTY_CYCLE
Symbol
Symbol
f
V
F
CLKOUT
t
t
OE/OD
OUTPP
V
N
t
t
V
NOISE
jit
I
V
V
jitter
start
I
DD
I
Df
board with maintained transverse airflow greater than 500 Ifpm. Electrical parameters are guaranteed only over the declared
operating temperature range. Functional operation of the device exceeding these conditions is not implied. Device specification limit
values are applied individually under normal operating conditions and not valid simultaneously.
t
t
board with maintained transverse airflow greater than 500 Ifpm. Electrical parameters are guaranteed only over the declared
operating temperature range. Functional operation of the device exceeding these conditions is not implied. Device specification limit
values are applied individually under normal operating conditions and not valid simultaneously.
IH
OH
(F)
IL
OL
SP
R
IH
F
IL
Power Supply Current
OE Input HIGH Voltage
OE Input LOW Voltage
Input HIGH Current
Input LOW Current
Output HIGH Voltage
Output LOW Voltage
Output Voltage Amplitude
Output Clock Frequency
Frequency Stability − NBXSBA031
Phase−Noise Performance
f
(See Figure 3)
Spurious Noise
RMS Phase Jitter
Cycle to Cycle, RMS
Cycle to Cycle, Peak−to−Peak
Period, RMS
Period, Peak−to−Peak
Output Enable/Disable Time
Output Clock Duty Cycle
(Measured at Cross Point)
Output Rise Time (20% and 80%)
Output Fall Time (80% and 20%)
Start−up Time
Aging
CLKout
= 340.00 MHz
Characteristic
Characteristic
(V
(V
DD
DD
= 2.5 V ± 5%; 3.3 V ± 10%, GND = 0 V, T
= 2.5 V ± 5%; 3.3 V ± 10%, GND = 0 V, T
OE
OE
Every Year After 1
http://onsemi.com
100 kHz of Carrier
10 MHz of Carrier
12 kHz to 20 MHz
100 Hz of Carrier
10 kHz of Carrier
1 MHz of Carrier
1 kHz of Carrier
10,000 Cycles
10,000 Cycles
DD
1000 Cycles
1000 Cycles
DD
Conditions
Conditions
(Note 4)
(Note 5)
1
− 2.0 V. See Figure 4.
− 2.0 V. See Figure 4.
st
Year
3
st
GND − 300
V
V
DD
DD
A
2000
−100
−100
A
Min.
Min.
48
−1945
−1195
= −40°C to +85°C) (Note 2)
= −40°C to +85°C) (Note 3)
340.00
−100
−113
−121
−121
−128
−155
Typ.
Typ.
700
250
250
0.4
1.5
95
15
10
50
1
1
V
V
DD
DD
Max.
+100
+100
Max.
V
105
800
±50
−60
200
400
400
0.7
30
20
52
−1600
8
4
5
3
1
DD
−945
dBc/Hz
dBc/Hz
dBc/Hz
dBc/Hz
dBc/Hz
dBc/Hz
Units
Units
MHz
ppm
ppm
ppm
dBc
mA
mV
mV
mV
mV
mV
ms
mA
mA
ps
ps
ps
ps
ps
ns
ps
ps
%