LMX2306TM/NOPB National Semiconductor, LMX2306TM/NOPB Datasheet - Page 3

• Manufacturer Part Number: LMX2306TM/NOPB
• Description: IC FREQ SYNTHESIZER 16-TSSOP
• Manufacturer: National Semiconductor
• Series: PLLatinum™r
• Type: PLL Frequency Synthesizerr

Specifications of LMX2306TM/NOPB

• Pll: Yes
• Input: CMOS
• Output: CMOS
• Number Of Circuits: 1
• Ratio - Input:output: 2:1
• Differential - Input:output: No/No
• Frequency - Max: 550MHz
• Divider/multiplier: Yes/No
• Voltage - Supply: 2.3 V ~ 5.5 V
• Operating Temperature: -40°C ~ 85°C
• Mounting Type: Surface Mount
• Package / Case: 16-TSSOP
• Frequency-max: 550MHz
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: *LMX2306TM; *LMX2306TM/NOPB; LMX2306TM

I
I
f
f
fφ
Pf
OSC
V
V
I
I
I
I
ICP
ICP
ICP
ICP
ICP
CC
CC-PWDN
IN
osc
IH
IL
IH
IL
IH
IL
Absolute Maximum Ratings
Electrical Characteristics
V
IN
Power Supply Voltage
Voltage on Any Pin
Storage Temperature Range (T
Lead Temperature (T
Symbol
CC
o-source
o-sink
o-source
o-sink
o-Tri
V
V
V
with GND = 0V (V
(solder, 4 sec.)
IN
CC1
CC2
p
= 3.0V, V
Power Supply Current
Powerdown Current
RF Input Operating
Frequency
Maximum Oscillator Frequency
Maximum Phase Detector Frequency
RF Input Sensitivity
Oscillator Sensitivity
High-Level Input Voltage
Low-Level Input Voltage
High-Level Input Current
Low-Level Input Current
Oscillator Input Current
Oscillator Input Current
Charge Pump Output Current
Charge Pump TRI-STATE Current
p
= 3.0V; −40˚C
I
)
L
)
Parameter
<
S
)
T
A
<
85˚C except as specified
−65˚C to +150˚C
LMX2306
LMX2316
LMX2326
LMX2306
LMX2316
LMX2326
−0.3V to V
−0.3V to +6.5V
−0.3V to +6.5V
−0.3V to +6.5V
(Notes 1, 2)
+260˚C
CC
0.3V
V
V
V
V
(Note 4)
(Note 4)
V
V
(Note 4)
V
V
V
(Note 3)
V
(Note 3)
V
(Note 3)
V
(Note 3)
0.5 ≤ V
−40˚C
+
CC
CC
CC
CC
IH
IL
IH
IL
Do
Do
Do
CPo
= 0V, V
= 0V, V
= V
= V
= V
= V
= V
= 2.3V to 5.5 V
= 2.3V to 5.5V
= 2.3V to 5.5V
= 3.0V
V
3
V
V
V
V
V
V
V
= V
CC
<
CC
CC
CC
CC
CC
CC
CC
CPo
CC
CC
p
p
p
/2, ICP
/2, ICP
/2, ICP
Recommended Operating
Conditions
Note 1: Absolute Maximum Ratings indicate limits beyond which damage to
the device may occur. Recommended operating conditions indicate condi-
tions for which the device is intended to be functional, but do not guarantee
specific performance limits. For guaranteed specifications and test condi-
tions, see the Electrical Characteristics. The guaranteed specifications apply
only for the test conditions listed.
Note 2: This device is a high performance RF integrated circuit with an ESD
rating
should only be done at ESD protected work stations.
p
T
Conditions
= 2.3V to
/2, ICP
Power Supply Voltage
Operating Temperature (T
= 2.3V to 5.5V
= 2.3V to 5.5V
= 2.3V to 5.5V
= 3.0V to 5.5V
= 2.3V to 5.5V
= 2.7V to 5.5V
= 3.0V to 5.5V
= 5.5V (Note 4)
= 5.5V
A
CC
CC
≤ V
V
V
V
<
CC1
CC2
p
<
= 5.5V
= 5.5V
p
85˚C
o
o
o
2 kV and is ESD sensitive. Handling and assembly of this device
− 0.5
o
= LOW
= LOW
= HIGH
= HIGH
<
3.0V
0.8 x V
−100
−1.0
−1.0
−2.5
Min
−15
−10
0.1
0.1
0.1
25
−5
A
5
5
)
CC
Values
V
Min
V
−40
2.3
−250
−1.0
CC1
Typ
250
CC
1.7
2.5
4.7
1.0
1
V
Max
+85
5.5
5.5
CC1
0.2 x
Max
V
550
100
100
3.5
5.0
7.0
1.2
2.1
2.8
1.0
1.0
2.5
40
10
+0
+0
CC
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Units
˚C
V
V
V
Units
MHz
MHz
MHz
MHz
dBm
dBm
dBm
GHz
GHz
GHz
mA
mA
mA
mA
mA
µA
µA
µA
µA
µA
µA
µA
nA
V
V