NB6L11DTG ON Semiconductor, NB6L11DTG Datasheet - Page 3

IC BUFFER/XLATOR DIFF 1:2 8TSSOP

NB6L11DTG

Manufacturer Part Number
NB6L11DTG
Description
IC BUFFER/XLATOR DIFF 1:2 8TSSOP
Manufacturer
ON Semiconductor
Type
Fanout Buffer (Distribution), Translatorr
Datasheet

Specifications of NB6L11DTG

Number Of Circuits
1
Ratio - Input:output
1:2
Differential - Input:output
Yes/Yes
Input
CML, LVCMOS, LVDS, LVNECL, LVPECL, LVTTL
Output
ECL
Frequency - Max
6GHz
Voltage - Supply
2.375 V ~ 3.465 V
Operating Temperature
-40°C ~ 85°C
Mounting Type
Surface Mount
Package / Case
8-TSSOP
Frequency-max
6GHz
Number Of Outputs
4
Max Input Freq
>6000 MHz
Propagation Delay (max)
0.2 ns @ 2.375V to 3.465V
Supply Voltage (max)
- 3.465 V or 3.465 V
Supply Voltage (min)
- 2.375 V or 2.375 V
Maximum Operating Temperature
+ 85 C
Minimum Operating Temperature
- 40 C
Mounting Style
SMD/SMT
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Other names
NB6L11DTG
NB6L11DTGOS

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
NB6L11DTG
Manufacturer:
Cypress
Quantity:
376
Company:
Part Number:
NB6L11DTG
Quantity:
10
Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the
Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect
device reliability.
Table 3. MAXIMUM RATINGS
Symbol
V
V
V
V
I
T
T
q
q
q
q
T
out
A
stg
JA
JC
JA
JC
sol
CC
EE
I
INPP
Positive Power Supply
Negative Power Supply
Positive Input Voltage
Negative Input Voltage
Differential Input Voltage
Output Current
Operating Temperature Range
Storage Temperature Range
Thermal Resistance (Junction−to−Ambient)
Thermal Resistance (Junction−to−Case)
Thermal Resistance (Junction−to−Ambient)
Thermal Resistance (Junction−to−Case)
Wave Solder
Parameter
Standard
Pb−Free
|D − D|
http://onsemi.com
V
V
V
V
V
V
Continuous
Surge
0 lfpm
500 lfpm
Standard Board
0 lfpm
500 lfpm
Standard Board
v 3 sec @ 248°C
v 3 sec @ 260°C
EE
CC
EE
CC
CC
CC
Condition 1
= 0 V
= 0 V
= 0 V
= 0 V
− V
− V
3
EE
EE
w 2.8 V
t 2.8 V
V
V
SOIC−8
SOIC−8
SOIC−8
TSSOP−8
TSSOP−8
TSSOP−8
I
I
v V
w V
Condition 2
CC
EE
|V
−65 to +150
−40 to +85
41 to 44
41 to 44
CC
Rating
−3.6
−3.6
190
130
185
140
265
265
3.6
3.6
2.8
25
50
− V
EE
|
°C/W
°C/W
°C/W
°C/W
°C/W
°C/W
Unit
mA
mA
°C
°C
°C
V
V
V
V
V

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