IXFB110N60P3 IXYS, IXFB110N60P3 Datasheet - Page 4

• Manufacturer Part Number: IXFB110N60P3
• Description: MOSFET N-CH 600V 110A PLUS264
• Manufacturer: IXYS
• Series: Polar3™ HiPerFET™r

Specifications of IXFB110N60P3

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 56 mOhm @ 500mA, 10V
• Drain To Source Voltage (vdss): 600V
• Current - Continuous Drain (id) @ 25° C: 110A
• Vgs(th) (max) @ Id: 5V @ 8mA
• Gate Charge (qg) @ Vgs: 245nC @ 10V
• Input Capacitance (ciss) @ Vds: 18000pF @ 25V
• Power - Max: 1890W
• Mounting Type: *
• Package / Case: *
• Vdss, Max, (v): 600
• Id(cont), Tc=25°c, (a): 110
• Rds(on), Max, Tj=25°c, (?): 0.056
• Ciss, Typ, (pf): 18000
• Qg, Typ, (nc): 245
• Trr, Typ, (ns): -
• Trr, Max, (ns): 250
• Pd, (w): 1890
• Rthjc, Max, (ºc/w): 0.066
• Package Style: PLUS264
• Lead Free Status / Rohs Status: Lead free / RoHS Compliant

IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions.
100,000
10,000
1,000
160
140
120
100
100
80
60
40
20
180
160
140
120
100
10
0
80
60
40
20
1
0
0.2
0
3.5
f
= 1 MHz
Fig. 9. Forward Voltage Drop of Intrinsic Diode
0.3
5
4.0
0.4
10
4.5
Fig. 7. Input Admittance
0.5
Fig. 11. Capacitance
15
T
5.0
0.6
V
V
J
V
DS
SD
= 125ºC
GS
20
- Volts
- Volts
- Volts
0.7
5.5
T
J
= 125ºC
25
- 40ºC
25ºC
0.8
C oss
C iss
C rss
T
6.0
J
= 25ºC
30
0.9
6.5
35
1.0
1.1
7.0
40
1000
200
180
160
140
120
100
100
80
60
40
20
10
10
9
8
7
6
5
4
3
2
1
0
0
1
10
0
0
T
T
Single Pulse
V
I
I
J
C
D
G
DS
= 150ºC
20
R
= 25ºC
= 55A
= 10mA
DS(on)
= 300V
Fig. 12. Forward-Bias Safe Operating Area
50
Limit
40
Fig. 8. Transconductance
60
Fig. 10. Gate Charge
Q
100
G
- NanoCoulombs
I
D
V
80
IXFB110N60P3
- Amperes
DS
100
- Volts
100
150
120
T
J
140
= - 40ºC
200
25ºC
125ºC
160
100µs
1ms
1,000
250
180