IXFB110N60P3 IXYS, IXFB110N60P3 Datasheet - Page 4
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IXFB110N60P3
Manufacturer Part Number
IXFB110N60P3
Description
MOSFET N-CH 600V 110A PLUS264
Manufacturer
IXYS
Series
Polar3™ HiPerFET™r
Datasheet
1.IXFB110N60P3.pdf
(5 pages)
Specifications of IXFB110N60P3
Fet Type
MOSFET N-Channel, Metal Oxide
Fet Feature
Standard
Rds On (max) @ Id, Vgs
56 mOhm @ 500mA, 10V
Drain To Source Voltage (vdss)
600V
Current - Continuous Drain (id) @ 25° C
110A
Vgs(th) (max) @ Id
5V @ 8mA
Gate Charge (qg) @ Vgs
245nC @ 10V
Input Capacitance (ciss) @ Vds
18000pF @ 25V
Power - Max
1890W
Mounting Type
*
Package / Case
*
Vdss, Max, (v)
600
Id(cont), Tc=25°c, (a)
110
Rds(on), Max, Tj=25°c, (?)
0.056
Ciss, Typ, (pf)
18000
Qg, Typ, (nc)
245
Trr, Typ, (ns)
-
Trr, Max, (ns)
250
Pd, (w)
1890
Rthjc, Max, (ºc/w)
0.066
Package Style
PLUS264
Lead Free Status / Rohs Status
Lead free / RoHS Compliant
IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions.
100,000
10,000
1,000
160
140
120
100
100
80
60
40
20
180
160
140
120
100
10
0
80
60
40
20
1
0
0.2
0
3.5
f
= 1 MHz
Fig. 9. Forward Voltage Drop of Intrinsic Diode
0.3
5
4.0
0.4
10
4.5
Fig. 7. Input Admittance
0.5
Fig. 11. Capacitance
15
T
5.0
0.6
V
V
J
V
DS
SD
= 125ºC
GS
20
- Volts
- Volts
- Volts
0.7
5.5
T
J
= 125ºC
25
- 40ºC
25ºC
0.8
C oss
C iss
C rss
T
6.0
J
= 25ºC
30
0.9
6.5
35
1.0
1.1
7.0
40
1000
200
180
160
140
120
100
100
80
60
40
20
10
10
9
8
7
6
5
4
3
2
1
0
0
1
10
0
0
T
T
Single Pulse
V
I
I
J
C
D
G
DS
= 150ºC
20
R
= 25ºC
= 55A
= 10mA
DS(on)
= 300V
Fig. 12. Forward-Bias Safe Operating Area
50
Limit
40
Fig. 8. Transconductance
60
Fig. 10. Gate Charge
Q
100
G
- NanoCoulombs
I
D
V
80
IXFB110N60P3
- Amperes
DS
100
- Volts
100
150
120
T
J
140
= - 40ºC
200
25ºC
125ºC
160
100µs
1ms
1,000
250
180