IXFK98N50P3 IXYS, IXFK98N50P3 Datasheet - Page 4

• Manufacturer Part Number: IXFK98N50P3
• Description: MOSFET N-CH 500V 98A TO264
• Manufacturer: IXYS
• Series: Polar3™ HiPerFET™r

Specifications of IXFK98N50P3

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 50 mOhm @ 500mA, 10V
• Drain To Source Voltage (vdss): 500V
• Current - Continuous Drain (id) @ 25° C: 98A
• Vgs(th) (max) @ Id: 5V @ 8mA
• Gate Charge (qg) @ Vgs: 197nC @ 10V
• Input Capacitance (ciss) @ Vds: 13100pF @ 25V
• Power - Max: 1300W
• Mounting Type: *
• Package / Case: *
• Vdss, Max, (v): 500
• Id(cont), Tc=25°c, (a): 98
• Rds(on), Max, Tj=25°c, (?): 0.05
• Ciss, Typ, (pf): 13100
• Qg, Typ, (nc): 197
• Trr, Typ, (ns): -
• Trr, Max, (ns): 250
• Pd, (w): 1300
• Rthjc, Max, (ºc/w): 0.096
• Package Style: TO-264
• Lead Free Status / Rohs Status: Lead free / RoHS Compliant

IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions.
100,000
10,000
1,000
100
300
250
200
150
100
160
140
120
100
10
50
80
60
40
20
1
0
0
0.3
3.0
0
f
= 1 MHz
0.4
Fig. 9. Forward Voltage Drop of Intrinsic Diode
3.5
5
0.5
4.0
10
0.6
Fig. 7. Input Admittance
T
J
Fig. 11. Capacitance
= 125ºC
4.5
15
0.7
V
V
V
DS
SD
GS
5.0
0.8
20
- Volts
- Volts
- Volts
0.9
T
5.5
J
25
T
J
= 25ºC
= 125ºC
C oss
C rss
- 40ºC
1.0
C iss
25ºC
6.0
30
1.1
6.5
35
1.2
1.3
7.0
40
1000
100
200
180
160
140
120
100
80
60
40
20
10
10
9
8
7
6
5
4
3
2
1
0
0
1
10
0
0
V
I
I
T
T
Single Pulse
R
D
G
20
DS
J
C
20
DS(on)
= 49A
= 10mA
= 150ºC
= 25ºC
= 250V
Fig. 12. Forward-Bias Safe Operating Area
Limit
40
40
Fig. 8. Transconductance
60
60
Fig. 10. Gate Charge
Q
G
80
- NanoCoulombs
I
D
80
V
- Amperes
DS
100
100
- Volts
100
120
IXFK98N50P3
IXFX98N50P3
T
J
120
= - 40ºC
125ºC
140
25ºC
140
160
160
100µs
1ms
180
1,000
180
200