IXFQ28N60P3 IXYS, IXFQ28N60P3 Datasheet - Page 4

• Manufacturer Part Number: IXFQ28N60P3
• Description: MOSFET N-CH 600V 28A TO3P
• Manufacturer: IXYS
• Series: Polar3™ HiPerFET™r

Specifications of IXFQ28N60P3

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 260 mOhm @ 500mA, 10V
• Drain To Source Voltage (vdss): 600V
• Current - Continuous Drain (id) @ 25° C: 28A
• Vgs(th) (max) @ Id: 5V @ 2.5mA
• Gate Charge (qg) @ Vgs: 50nC @ 10V
• Input Capacitance (ciss) @ Vds: 3560pF @ 25V
• Power - Max: 695W
• Mounting Type: *
• Package / Case: *
• Vdss, Max, (v): 600
• Id(cont), Tc=25°c, (a): 28
• Rds(on), Max, Tj=25°c, (?): 0.260
• Ciss, Typ, (pf): 3560
• Qg, Typ, (nc): 50
• Trr, Typ, (ns): -
• Trr, Max, (ns): 250
• Pd, (w): 695
• Rthjc, Max, (ºc/w): 0.18
• Package Style: TO-3P
• Lead Free Status / Rohs Status: Lead free / RoHS Compliant

IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions.
10,000
1,000
100
100
10
50
40
30
20
10
90
80
70
60
50
40
30
20
10
0
0
1
3.0
0.3
0
f
= 1 MHz
Fig. 9. Forward Voltage Drop of Intrinsic Diode
0.4
3.5
5
0.5
4.0
10
Fig. 7. Input Admittance
0.6
Fig. 11. Capacitance
T
J
4.5
15
= 125ºC
0.7
V
V
V
DS
GS
SD
5.0
20
- Volts
- Volts
- Volts
0.8
5.5
25
T
J
T
0.9
J
= 125ºC
C oss
C rss
C iss
- 40ºC
= 25ºC
25ºC
6.0
30
1.0
6.5
35
1.1
7.0
1.2
40
100
0.1
10
60
50
40
30
20
10
10
9
8
7
6
5
4
3
2
1
0
1
0
10
0
0
R
T
T
Single Pulse
V
I
I
DS(on)
D
G
J
C
DS
5
= 150ºC
= 25ºC
= 14A
= 10mA
= 300V
Fig. 12. Forward-Bias Safe Operating Area
Limit
10
10
Fig. 8. Transconductance
15
Fig. 10. Gate Charge
Q
20
20
G
I
- NanoCoulombs
D
V
- Amperes
DS
100
25
- Volts
30
30
IXFQ28N60P3
IXFH28N60P3
T
J
= - 40ºC
35
125ºC
25ºC
40
40
45
100µs
1ms
1,000
50
50