IXFH22N60P3 IXYS, IXFH22N60P3 Datasheet - Page 4

• Manufacturer Part Number: IXFH22N60P3
• Description: MOSFET N-CH 600V 22A TO247
• Manufacturer: IXYS
• Series: Polar3™ HiPerFET™r

Specifications of IXFH22N60P3

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 360 mOhm @ 500mA, 10V
• Drain To Source Voltage (vdss): 600V
• Current - Continuous Drain (id) @ 25° C: 22A
• Vgs(th) (max) @ Id: 5V @ 1.5mA
• Gate Charge (qg) @ Vgs: 38nC @ 10V
• Input Capacitance (ciss) @ Vds: 2600pF @ 25V
• Power - Max: 500W
• Mounting Type: *
• Package / Case: *
• Vdss, Max, (v): 600
• Id(cont), Tc=25°c, (a): 22
• Rds(on), Max, Tj=25°c, (?): 0.36
• Ciss, Typ, (pf): 2600
• Qg, Typ, (nc): 38
• Trr, Typ, (ns): -
• Trr, Max, (ns): 250
• Pd, (w): 500
• Rthjc, Max, (ºc/w): 0.25
• Package Style: TO-247
• Lead Free Status / Rohs Status: Lead free / RoHS Compliant

IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions.
10,000
1,000
100
35
30
25
20
15
10
40
35
30
25
20
15
10
5
0
10
5
0
1
3.5
0.3
0
f
Fig. 9. Forward Voltage Drop of Intrinsic Diode
= 1 MHz
5
0.4
4.0
10
0.5
4.5
Fig. 7. Input Admittance
Fig. 11. Capacitance
15
T
0.6
J
V
V
V
5.0
= 125ºC
GS
SD
DS
- Volts
- Volts
20
- Volts
T
J
0.7
= 125ºC
- 40ºC
25ºC
5.5
25
C oss
C rss
C iss
0.8
30
6.0
T
J
= 25ºC
0.9
35
6.5
1.0
40
100
0.1
10
45
40
35
30
25
20
15
10
10
1
5
0
9
8
7
6
5
4
3
2
1
0
10
0
0
T
T
Single Pulse
J
C
V
I
I
R
D
G
= 150ºC
DS
= 25ºC
DS(on)
= 11A
= 10mA
5
IXFP22N60P3 IXFQ22N60P3
= 300V
Fig. 12. Forward-Bias Safe Operating Area
5
Limit
10
10
Fig. 8. Transconductance
Fig. 10. Gate Charge
15
Q
G
- NanoCoulombs
15
I
V
D
DS
- Amperes
100
- Volts
20
20
IXFH22N60P3
25
T
J
= - 40ºC
25
30
25ºC
125ºC
30
35
100µs
1ms
1,000
40
35