CMF10120D Cree Inc, CMF10120D Datasheet - Page 2

• Manufacturer Part Number: CMF10120D
• Description: SIC MOSFET N-CH 1200V 24A TO247
• Manufacturer: Cree Inc
• Series: Z-FET™r

Specifications of CMF10120D

• Fet Type: SiCFET N-Channel, Silicon Carbide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 220 mOhm @ 10A, 20V
• Drain To Source Voltage (vdss): 1200V (1.2kV)
• Current - Continuous Drain (id) @ 25° C: 24A
• Vgs(th) (max) @ Id: 4V @ 500µA
• Gate Charge (qg) @ Vgs: 47.1nC @ 20V
• Input Capacitance (ciss) @ Vds: 928pF @ 800V
• Power - Max: 152W
• Mounting Type: *
• Package / Case: *
• Transistor Polarity: N Channel
• Continuous Drain Current Id: 24A
• Drain Source Voltage Vds: 1.2kV
• On Resistance Rds(on): 0.16ohm
• Rds(on) Test Voltage Vgs: 20V
• Rohs Compliant: YES
• Configuration: Single
• Resistance Drain-source Rds (on): 160 mOhms
• Forward Transconductance Gfs (max / Min): 3.7 S, 3.4 S
• Drain-source Breakdown Voltage: 1200 V
• Gate-source Breakdown Voltage: 25 V
• Continuous Drain Current: 24 A
• Power Dissipation: 152 W
• Mounting Style: Through Hole
• Gate Charge Qg: 47.1 nC
• Lead Free Status / Rohs Status: Lead free / RoHS Compliant

Electrical Characteristics
V
V
I
I
R
g
C
C
C
t
t
t
t
E
E
R
Reverse Diode Characteristics
Symbol
V
t
Q
I
Thermal Characteristics
R
R
R
Symbol
Symbol
DSS
GSS
d(on)i
ri
d(off)i
fi
rr
rrm
fs
(BR)DSS
GS(th)
ON
OFF
sd
DS(on)
iss
oss
rss
G
θJC
θCS
θJA
rr
Diode Forward Voltage
Reverse Recovery Time
Reverse Recovery Charge
Peak Reverse Recovery Current
Thermal Resistance Junction to
Case
Thermal Resistance Case to
Sink
Thermal Resistance Junction to
Ambient
Drain – Source Breakdown
Voltage
Gate Threshold Voltage
Zero Gate Voltage Drain
Current
Gate-Source Leakage Current
Drain-Source On-State
Resistance
Transconductance
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Turn-On Switching Loss
Turn-Off Switching Loss
Internal Gate Resistance
Parameter
Parameter
Parameter
(T
C
3.5
3.1
138
94
1.57
1200
Typ
Min
Min
= 25°C unless otherwise specified)
Value
Max
Value
Value
2.85
2.20
1
10
0.16
0.19
3.7
3.4
928
63.2
7.45
7
14
46
37
261
120
13.6
0.66
Typ
Typ
V
V
ns
nC
A
Unit
4
50
125
250
0.22
0.26
Max
Max
Subject to change without Notice
V
V
V
V
di
K/W
Unit
GS
GS
GS
R
Unit
f
µA
nA
/dt = 100A/µs
pF
ns
µJ
V
V
V
Ω
S
Ω
= 800V
= -5V, I
= -5V, I
= -5V, I
V
V
I
V
I
V
V
V
V
V
V
I
V
I
V
I
V
f = 1MHz, V
V
I
L = 856µH
Per JEDEC24 pg 27
f = 1MHz, V
D
D
V
I
D
D
D
D
D
Test Conditions
GS
DS
DS
DS
GS
DS
GS
GS
GS
GS
GS
GS
DD
GS
= 500µA
= 500µA, T
= 10A, T
= 10A
= 10A, T
= 10A, R
F
F
F
= 10A
CMF10120D Pre. A
= -5V, I
= V
= V
= 1200V,
= 0V
= 1200V,
= 20V, V
= 20V,
= 20V,
= 20V,
= 20V,
= 0V, V
= 800V, V
= 5A, T
= 5A, T
= 10A T
= 0V, T
Test Conditions
Test Conditions
GS
GS
,
,
J
J
G(ext)
J
J
D
DS
J
J
=125°C
=125°C
AC
AC
= 25°C
= 125°C
DS
= 100µA
J
= 25°C
=125°C
GS
= 800V
=125°C
= 25mV
= 25mV
= 0V
= 6.8Ω,
= -2/20V
2
20A
was
2.5V
20A
was
1.8V
Notes
Notes
Notes