DS25BR110TSDX National Semiconductor, DS25BR110TSDX Datasheet - Page 5

• Manufacturer Part Number: DS25BR110TSDX
• Manufacturer: National Semiconductor

Specifications of DS25BR110TSDX

• Number Of Elements: 1
• Input Type: CMOS
• Operating Supply Voltage (typ): 3.3V
• Differential Input High Threshold Voltage: 100mV
• Diff. Input Low Threshold Volt: -100mV
• Output Type: Repeater
• Differential Output Voltage: 450mV
• Transmission Data Rate: 390.625MBps
• Propagation Delay Time: 0.465ns
• Power Dissipation: 2.08W
• Operating Temp Range: -40C to 85C
• Operating Temperature Classification: Industrial
• Mounting: Surface Mount
• Pin Count: 8
• Number Of Receivers: 1
• Number Of Drivers: 1
• Lead Free Status / RoHS Status: Not Compliant

LVDS OUTPUT AC SPECIFICATIONS (OUT+, OUT-)
t
t
t
t
t
t
JITTER PERFORMANCE WITH EQ = OFF
t
t
t
t
t
t
Symbol
PHLD
PLHD
SKD1
SKD2
LHT
HLT
RJ1A
RJ2A
DJ1A
DJ2A
TJ1A
TJ2A
AC Electrical Characteristics
Over recommended operating supply and temperature ranges unless otherwise specified. (Notes 9, 10)
Differential Propagation Delay High to Low
Differential Propagation Delay Low to High
Pulse Skew |t
Part to Part Skew (Note 13)
Rise Time
Fall Time
Random Jitter (RMS Value)
No Test Channels
(Note 14)
Deterministic Jitter (Peak to Peak)
No Test Channels
(Note 15)
Total Jitter (Peak to Peak)
No Test Channels
(Note 16)
PLHD
− t
Parameter
PHLD
| (Note 12)
(Note 11)
R
R
V
V
Clock (RZ)
EQ0 = 0, EQ1 = 0
V
V
K28.5 (NRZ)
EQ0 = 0, EQ1 = 0
V
V
PRBS-23 (NRZ)
EQ0 = 0, EQ1 = 0
ID
CM
ID
CM
ID
CM
L
L
= 100Ω
= 100Ω
= 350 mV
= 350 mV
= 350 mV
= 1.2V
= 1.2V
= 1.2V
5
Conditions
2.5 Gbps
3.125 Gbps
2.5 Gbps
3.125 Gbps
2.5 Gbps
3.125 Gbps
Min
0.05
0.08
Typ
350
350
0.5
0.5
45
45
80
80
11
11
Max
0.16
0.20
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465
465
100
150
150
150
40
47
1
1
Units
UI
UI
ps
ps
ps
ps
ps
ps
ps
ps
ps
ps
P-P
P-P