NUF3102MUTAG ON Semiconductor, NUF3102MUTAG Datasheet - Page 2

• Manufacturer Part Number: NUF3102MUTAG
• Description: IC EMI FILTER 3LINE ESD 8-UDFN
• Manufacturer: ON Semiconductor

Specifications of NUF3102MUTAG

• Resistance (ohms): 100
• Capacitance: 13pF
• Package / Case: 8-UDFN Exposed Pad
• Resistance In Ohms: 100
• Diode Type: Low Capacitance
• Operating Voltage: 5V
• No. Of Pins: 8
• Current Rating: 1A
• Filter Type: EMI
• Leaded Process Compatible: Yes
• Rohs Compliant: Yes
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Power (watts): -
• Tolerance: -

Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the
Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect
device reliability.
1. Measured at 25°C.
2. Total Line Capacitance is two times the Diode Capacitance (Cd).
3. 50 W source and 50 W load termination.
ELECTRICAL CHARACTERISTICS
MAXIMUM RATINGS
ESD Discharge IEC61000-4-2
Operating Temperature Range
Storage Temperature Range
Maximum Lead Temperature for Soldering Purposes (1.8 in from case for 10 seconds)
Maximum Reverse Working Voltage
Breakdown Voltage
Leakage Current
Resistance
Resistance
Capacitance (Notes 1 and 2)
Cut-Off Frequency (Note 3)
Parameter
Parameter
(T
Symbol
J
V
= 25°C unless otherwise noted)
V
f
RWM
Cd
R
R
3dB
I
BR
R
1
2
appreciable attenuation occurs
http://onsemi.com
V
Above this frequency,
NUF3102MU
R
Test Conditions
= 2.5 V, f = 1.0 MHz
V
I
RWM
I
I
R
R
R
Human Body Model
= 1.0 mA
= 10 mA
= 10 mA
Contact Discharge
2
= 3.3 V
Machine Model
Min
6.0
85
40
10
Symbol
T
V
T
STG
T
OP
PP
L
Typ
100
150
7.0
47
13
-55 to 150
-40 to 85
Value
260
0.4
8.0
14
Max
100
115
5.0
8.0
54
16
MHz
Unit
Unit
nA
kV
°C
°C
°C
pF
W
W
V
V