NE681M13-T3-A California Eastern Labs, NE681M13-T3-A Datasheet

NE681M13-T3-A

Manufacturer Part Number

NE681M13-T3-A

Description

Manufacturer

California Eastern Labs

Datasheet

1.NE681M13-T3-A.pdf (3 pages)

Specifications of NE681M13-T3-A

Transistor Polarity

NPN

Number Of Elements

Collector-emitter Voltage

10V

Collector-base Voltage(max)

20V

Emitter-base Voltage (max)

1.5V

Collector Current (dc) (max)

65mA

Dc Current Gain (min)

Power Dissipation

140mW

Frequency (max)

7GHz

Operating Temp Range

-65C to 150C

Operating Temperature Classification

Military

Mounting

Surface Mount

Pin Count

Collector-base Voltage

20V

Emitter-base Voltage

1.5V

Lead Free Status / RoHS Status

Compliant

Available stocks

Company

Part Number

Manufacturer

Quantity

Price

Company:

Meier Automation Equipment Co., Limited

Part Number:

NE681M13-T3-A

Manufacturer:

RENESAS/瑞萨

Quantity:

20 000

Current page: 1 of 3
Download datasheet (149Kb)

ELECTRICAL CHARACTERISTICS

FEATURES

NEC's NE681M13 transistor is ideal for low noise, high gain,

and low cost amplifier applications. NEC's new low profile/

flat lead style "M13" package is ideal for today's portable

wireless applications. The NE681 is also available in chip,

Micro-x, and six different low cost plastic surface mount

package styles.

Notes:

1. Electronic Industrial Association of Japan.

2. Pulsed measurement, pulse width ≤ 350 µs, duty cycle ≤ 2 %.

3. Capacitance is measured with emitter and case connected to the guard terminal at the bridge.

• NEW MINIATURE M13 PACKAGE:

• HIGH GAIN BANDWIDTH PRODUCT:

• LOW NOISE FIGURE:

DESCRIPTION

SYMBOLS

– Small transistor outline –

– Low profile / 0.50 mm package height

– Flat lead style for better RF performance

NF = 1.4 dB

1.0 X 0.5 X 0.5 mm

= 7 GHz

CBO

EBO

21E

FE 2

RE 3

Gain Bandwidth at V

Noise Figure at V

Insertion Power Gain at V

Forward Current Gain at V

Collector Cutoff Current at V

Emitter Cutoff Current at V

Feedback Capacitance at V

NEC's NPN SILICON TRANSISTOR

PARAMETERS AND CONDITIONS

= 3 V, I

EIAJ

= 3 V, I

PACKAGE OUTLINE

REGISTERED NUMBER

PART NUMBER

= 3 V, I

= 7 mA, f = 1 GHz

= 3 V, I

= 1 V, I

= 3 V, I

= 10 V, I

= 7 mA, f = 1 GHz

= 25°C)

= 7 mA

= 0

= 0, f = 1 MHz

= 0

PIN CONNECTIONS

1. Emitter

2. Base

3. Collector

OUTLINE DIMENSIONS

1.0

+0.1

–0.05

0.5±0.05

0.1

California Eastern Laboratories

0.5

+0.1

–0.05

UNITS

GHz

µA

PACKAGE OUTLINE M13

0.125

0.1

+0.1

–0.05

0.7

MIN

4.5

0.15

0.35

0.15

+0.1

–0.05

NE681M13

(Units in mm)

+0.1

–0.05

NE681M13

2SC5615

M13

TYP

Bottom View

1.4

0.2

0.3

MAX

145

2.7

0.8

0.9

0.2

+0.1

–0.05

Related parts for NE681M13-T3-A

NE681M13-T3-A Summary of contents

Page 1

... T • LOW NOISE FIGURE 1.4 dB DESCRIPTION NEC's NE681M13 transistor is ideal for low noise, high gain, and low cost amplifier applications. NEC's new low profile/ flat lead style "M13" package is ideal for today's portable wireless applications. The NE681 is also available in chip, Micro-x, and six different low cost plastic surface mount package styles ...

Page 2

... CALIFORNIA EASTERN LABORATORIES • Headquarters • 4590 Patrick Henry Drive • Santa Clara, CA 95054-1817 • (408) 988-3500 • Telex 34-6393 • FAX (408) 988-0279 24-Hour Fax-On-Demand: 800-390-3232 (U.S. and Canada only) • Internet: http://WWW.CEL.COM DATA SUBJECT TO CHANGE WITHOUT NOTICE 1 ORDERING INFORMATION (T = 25°C) A PART NUMBER UNITS RATINGS NE681M13 NE681M13-T3 1 140 150 °C -65 to +150 ° 25° ...

Page 3

Subject: Compliance with EU Directives CEL certifies, to its knowledge, that semiconductor and laser products detailed below are compliant with the requirements of European Union (EU) Directive 2002/95/EC Restriction on Use of Hazardous Substances in electrical and electronic equipment (RoHS) ...

Related keywords

NE681M13-T3-A datasheet
NE681M13-T3-A data sheet
NE681M13-T3-A pdf datasheet
NE681M13-T3-A component
NE681M13-T3-A part
NE681M13-T3-A distributor
NE681M13-T3-A RoHS
NE681M13-T3-A datasheet download