TLP822 Toshiba, TLP822 Datasheet - Page 3

• Manufacturer Part Number: TLP822
• Manufacturer: Toshiba
• Type: Transmissiver

Specifications of TLP822

• Number Of Elements: 1
• Output Device: Phototransistor
• Gap Width: 5mm
• Slit Width: 0.5mm
• Reverse Breakdown Voltage: 5V
• Collector-emitter Voltage: 35V
• Forward Current: 50mA
• Package Type: 11-13B1
• Collector Current (dc) (max): 50mA
• Current Transfer Ratio: 75%
• Power Dissipation: 75mW
• Fall Time: 50000ns
• Rise Time: 50000ns
• Pin Count: 4
• Mounting: Through Hole
• Operating Temp Range: -10C to 75C
• Operating Temperature Classification: Commercial
• Lead Free Status / RoHS Status: Not Compliant

Optical And Electrical Characteristics
Forward voltage
Reverse current
Peak emission wavelength
Dark current
Peak sensitivity wavelength
Current transfer ratio
Collector−emitter saturation voltage
Rise time
Fall time
Characteristic
I
V
Symbol
D
I
CE(sat)
(I
C
V
λ
λ
I
CEO
t
R
t
/ I
P
P
r
f
F
F
)
(Ta = 25°C)
I
V
I
V
V
I
V
F
F
F
R
CE
CE
CC
=20mA,I
= 10mA
= 10mA
= 5V
=24V,I
=2V,I
=5V,I
3
F
C
Test Condition
C
F
=10mA
=1mA,R
=0.5mA
=0
―
L
=1kΩ
TLP822(F),TLP827(F)
1.00
Min
―
―
―
―
―
―
―
5
Typ.
1.15
940
870
0.1
15
15
―
―
―
2004-02-12
Max
1.30
0.1
0.4
10
75
50
50
―
―
Unit
nm
nm
µA
µA
µs
%
V
V