MT36HTF51272FZ-667H1N8 Micron Technology Inc, MT36HTF51272FZ-667H1N8 Datasheet - Page 8

• Manufacturer Part Number: MT36HTF51272FZ-667H1N8
• Description: MODULE DDR2 SDRAM 4GB 240FBDIMM
• Manufacturer: Micron Technology Inc
• Series: -r

Specifications of MT36HTF51272FZ-667H1N8

• Main Category: DRAM Module
• Sub-category: DDR2 SDRAM
• Module Type: 240FBDIMM
• Device Core Size: 72b
• Organization: 512Mx72
• Chip Density: 1Gb
• Package Type: FBDIMM
• Maximum Clock Rate: 667MHz
• Operating Supply Voltage (typ): 1.8V
• Number Of Elements: 36
• Operating Supply Voltage (max): 1.9V
• Operating Supply Voltage (min): 1.7V
• Operating Temp Range: 0C to 95C
• Operating Temperature Classification: Commercial
• Pin Count: 240
• Mounting: Socket
• Memory Type: DDR2 SDRAM
• Memory Size: 4GB
• Speed: 667MT/s
• Features: -
• Package / Case: 240-FBDIMM
• Lead Free Status / RoHS Status: Supplier Unconfirmed

Electrical Specifications
Table 6:
Table 7:
PDF: 09005aef83d491e1Source: 09005aef83d49311
htf36c512x72fz.fm - Rev. A 11/09 EN
Parameter
Parameter
Voltage on any pin relative to V
Voltage on V
Voltage on V
Voltage on V
DDR2 SDRAM device operating case temperature
AMB device operating temperature
AMB supply voltage
DDR2 SDRAM supply voltage
Termination voltage
EEPROM supply voltage
SPD input high (logic 1) voltage
SPD input low (logic 0) voltage
RESET input high (logic 1) voltage
RESET input low (logic 0) voltage
Leakage current (RESET)
Leakage current (link)
CC
DD
TT
Absolute Maximum Ratings
Input DC Voltage and Operating Conditions
pin relative to V
pin relative to V
pin relative to V
Notes: 1. V
Notes: 1. Applies to AMB and SPD.
Stresses greater than those listed in Table 6 may cause permanent damage to the DRAM
devices on the module. This is a stress rating only and functional operation of the mod-
ule at these or any other conditions outside those indicated in the device data sheet are
not implied. Exposure to absolute maximum rating conditions for extended periods may
adversely affect reliability.
2. T
3. See applicable DDR2 SDRAM component data sheet for
2. Applies to serial memory buffer (SMB) and SPD bus signals.
3. Applies to AMB CMOS signal RESET#.
4. For all other AMB-related DC parameters, please refer to the high-speed differential link
SS
SS
SS
SS
t
settings. The
sustain <85°C operation.
interface specification.
REFI = 3.9µs above 85°C); refer to the DDR2 SDRAM component data sheet.
C
IN
is specified at 95°C only when using 2x refresh timing (
should not be greater than V
t
REFI parameter is used to specify the doubled refresh interval necessary to
Symbol
Symbol
V
V
V
V
V
V
IN
DDSPD
V
IH(DC)
IH(DC)
V
V
IL(DC)
IL(DC)
V
V
I
I
, V
V
DD
CC
TT
L
L
T
DD
CC
TT
C
OUT
4GB (x72, DR) 240-Pin DDR2 SDRAM FBDIMM
8
0.48 × V
CC
.
Min
1.46
–90
1.7
2.1
–5
3
1
–
–
Micron Technology, Inc., reserves the right to change products or specifications without notice.
Min
–0.3
–0.3
–0.5
–0.5
0
0
DD
0.5 × V
Nom
1.5
1.8
3.3
–
–
–
–
–
–
+1.75
+1.75
+110
Max
+2.3
+2.3
+95
DD
t
REFI and extended mode register
Electrical Specifications
t
REFI = 7.8µs at or below 85°C;
0.52 × V
V
Max
1.54
DDSPD
+90
1.9
3.6
0.8
0.5
©2009 Micron Technology, Inc. All rights reserved.
+5
–
Units
DD
°C
°C
V
V
V
V
Units
µA
µA
V
V
V
V
V
V
V
V
Notes
2, 3
Notes
1
1
2
2
3
2
3
4