MT4HTF3264HY-667F1 Micron Technology Inc, MT4HTF3264HY-667F1 Datasheet

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MT4HTF3264HY-667F1

Manufacturer Part Number
MT4HTF3264HY-667F1
Description
Manufacturer
Micron Technology Inc
Datasheet

Specifications of MT4HTF3264HY-667F1

Main Category
DRAM Module
Sub-category
DDR2 SDRAM
Module Type
200SODIMM
Device Core Size
64b
Organization
32Mx64
Total Density
256MByte
Chip Density
512Mb
Maximum Clock Rate
667MHz
Operating Supply Voltage (typ)
1.8V
Operating Current
1A
Number Of Elements
4
Operating Supply Voltage (max)
1.9V
Operating Supply Voltage (min)
1.7V
Operating Temp Range
0C to 70C
Operating Temperature Classification
Commercial
Pin Count
200
Mounting
Socket
Lead Free Status / RoHS Status
Compliant
DDR2 SDRAM SODIMM
MT4HTF1664HY – 128MB
MT4HTF3264HY – 256MB
MT4HTF6464HY – 512MB
Features
• 200-pin, small-outline dual in-line memory module
• Fast data transfer rates: PC2-3200, PC2-4200,
• 128MB (16 Meg x 64), 256MB (32 Meg x 64), or
• V
• V
• JEDEC-standard 1.8V I/O (SSTL_18-compatible)
• Differential data strobe (DQS, DQS#) option
• 4n-bit prefetch architecture
• Multiple internal device banks for concurrent opera-
• Programmable CAS latency (CL)
• Posted CAS additive latency (AL)
• WRITE latency = READ latency - 1
• Programmable burst lengths (BL): 4 or 8
• Adjustable data-output drive strength
• 64ms, 8192-cycle refresh
• On-die termination (ODT)
• Serial presence detect (SPD) with EEPROM
• Gold edge contacts
• Single rank
Table 1: Key Timing Parameters
PDF: 09005aef8161d160
htf4c16_32_64x64h.pdf - Rev. I 3/10 EN
(SODIMM)
PC2-5300, or PC2-6400
512MB (64 Meg x 64)
tion
Speed
Grade
DD
DDSPD
-80E
-800
-667
-53E
-40E
= V
DDQ
= 1.7–3.6V
= 1.8V
Products and specifications discussed herein are subject to change by Micron without notice.
Nomenclature
Industry
PC2-6400
PC2-6400
PC2-5300
PC2-4200
PC2-3200
t
CK
CL = 6
128MB, 256MB, 512MB (x64, SR) 200-Pin DDR2 SODIMM
800
800
CL = 5
Data Rate (MT/s)
800
667
667
1
Figure 1: 200-Pin SODIMM (MO-224 R/C C)
CL = 4
Module height: 30mm (1.18in)
Options
• Operating temperature
• Package
• Frequency/CL
533
533
553
553
400
Notes:
– Commercial (0°C ≤ T
– Industrial (–40°C ≤ T
– 200-pin DIMM (lead-free)
– 2.5ns @ CL = 5 (DDR2-800)
– 2.5ns @ CL = 6 (DDR2-800)
– 3.0ns @ CL = 5 (DDR2-667)
– 3.75ns @ CL = 4 (DDR2-533)
– 5.0ns @ CL = 3 (DDR2-400)
Micron Technology, Inc. reserves the right to change products or specifications without notice.
1. Contact Micron for industrial temperature
2. CL = CAS (READ) latency.
3. Not recommended for new designs.
CL = 3
400
400
400
400
400
module offerings.
2
t
(ns)
12.5
RCD
15
15
15
15
A
A
≤ +85°C)
≤ +70°C)
© 2005 Micron Technology, Inc. All rights reserved.
3
3
1
(ns)
12.5
t
15
15
15
15
RP
Features
Marking
None
-80E
-53E
-40E
-800
-667
(ns)
t
55
55
55
55
55
Y
RC
I

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MT4HTF3264HY-667F1 Summary of contents

Page 1

... DDR2 SDRAM SODIMM MT4HTF1664HY – 128MB MT4HTF3264HY – 256MB MT4HTF6464HY – 512MB Features • 200-pin, small-outline dual in-line memory module (SODIMM) • Fast data transfer rates: PC2-3200, PC2-4200, PC2-5300, or PC2-6400 • 128MB (16 Meg x 64), 256MB (32 Meg x 64), or 512MB (64 Meg x 64) • ...

Page 2

... Table 2: Addressing Parameter Refresh count Row address Device bank address Device configuration Column address Module rank address Table 3: Part Numbers and Timing Parameters – 128MB Modules (End of Life) 1 Base device: MT47H16M16, 256Gb DDR2 SDRAM Module 2 Part Number Density MT4HTF1664H(I)Y-667__ MT4HTF1664H9(I)Y-53E__ MT4HTF1664H(I)Y-40E__ Table 4: Part Numbers and Timing Parameters – ...

Page 3

Pin Assignments Table 6: Pin Assignments 200-Pin DDR2 SODIMM Front Pin Symbol Pin Symbol Pin DQS2 101 REF 103 DQ0 55 DQ18 105 7 DQ1 57 DQ19 107 9 V ...

Page 4

... Pin Descriptions The pin description table below is a comprehensive list of all possible pins for all DDR2 modules. All pins listed may not be supported on this module. See Pin Assignments for information specific to this module. Table 7: Pin Descriptions Symbol Type Ax Input BAx Input ...

Page 5

... SPD EEPROM power supply: 1.7–3.6V. Reference voltage: V /2. DD Ground. No connect: These pins are not connected on the module. No function: These pins are connected within the module, but provide no functionality. Not used: These pins are not used in specific module configurations/operations. Reserved for future use. 5 Pin Descriptions and V ...

Page 6

Functional Block Diagram Figure 2: Functional Block Diagram 3 S0# DQS0 DQS DQS0# DQS# DM0 DM DQ0 DQ DQ DQ1 DQ DQ2 DQ3 DQ DQ4 DQ DQ5 DQ DQ6 DQ DQ7 DQ DQS1 DQS DQS1# DQS# DM1 DM DQ DQ8 ...

Page 7

... DRAM core and eight corresponding n-bit-wide, one-half-clock-cycle data trans- fers at the I/O pins. DDR2 modules use two sets of differential signals: DQS, DQS# to capture data and CK and CK# to capture commands, addresses, and control signals. Differential clocks and data strobes ensure exceptional noise immunity for these signals and provide precise crossing points to capture input signals ...

Page 8

... Electrical Specifications Stresses greater than those listed may cause permanent damage to the module. This is a stress rating only, and functional operation of the module at these or any other condi- tions outside those indicated in the device data sheet are not implied. Exposure to absolute maximum rating conditions for extended periods may adversely affect reliability. ...

Page 9

... Component specifications are available on Micron's Web site. Module speed grades cor- relate with component speed grades. Table 9: Module and Component Speed Grades DDR2 components may exceed the listed module speed grades; module may not be available in all listed speed grades Module Speed Grade -1GA ...

Page 10

I Specifications DD Table 10: DDR2 I Specifications and Conditions – 128MB DD Values shown for MT47H16M16 DDR2 SDRAM only and are computed from values specified in the 256Mb (16 Meg x 16) component data sheet Parameter Operating one bank ...

Page 11

Table 11: DDR2 I Specifications and Conditions – 256MB DD Values shown for MT47H32M16 DDR2 SDRAM only and are computed from values specified in the 512Mb (32 Meg x 16) component data sheet Parameter Operating one bank active-precharge current: t ...

Page 12

Table 11: DDR2 I Specifications and Conditions – 256MB (Continued) DD Values shown for MT47H32M16 DDR2 SDRAM only and are computed from values specified in the 512Mb (32 Meg x 16) component data sheet Parameter Operating bank interleave read current: ...

Page 13

Table 12: DDR2 I Specifications and Conditions – 512MB (Die Revision A) DD Values shown for MT47H64M16 DDR2 SDRAM only and are computed from values specified in the 1Gb (64 Meg x 16) com- ponent data sheet Parameter Operating one ...

Page 14

Table 13: DDR2 I Specifications and Conditions – 512MB (Die Revision E) DD Values shown for MT47H64M16 DDR2 SDRAM only and are computed from values specified in the 1Gb (64 Meg x 16) com- ponent data sheet Parameter Operating one ...

Page 15

Table 13: DDR2 I Specifications and Conditions – 512MB (Die Revision E) (Continued) DD Values shown for MT47H64M16 DDR2 SDRAM only and are computed from values specified in the 1Gb (64 Meg x 16) com- ponent data sheet Parameter Operating ...

Page 16

Serial Presence-Detect For the latest SPD data, refer to Micron's SPD page: www.micron.com/SPD. Table 14: SPD EEPROM Operating Conditions Parameter/Condition Supply voltage Input high voltage: logic 1; All inputs Input low voltage: logic 0; All inputs Output low voltage: I ...

Page 17

... 0.99 (0.039) 0.45 (0.018) TYP TYP Pin 1 63.6 (2.504) TYP Back view No components this side of module 4.2 (0.165) TYP 47.4 (1.87) TYP additional design dimensions. times occur. 17 Module Dimensions U4 30.0 (1.18) 29.85 (1.175) 20.0 (0.787) TYP 0.6 (0.024) ...

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