MT45W4MW16BFB-706 WT F Micron Technology Inc, MT45W4MW16BFB-706 WT F Datasheet - Page 15
![IC PSRAM 64MBIT 70NS 54VFBGA](/photos/7/22/72262/557-54-vfbga_sml.jpg)
MT45W4MW16BFB-706 WT F
Manufacturer Part Number
MT45W4MW16BFB-706 WT F
Description
IC PSRAM 64MBIT 70NS 54VFBGA
Manufacturer
Micron Technology Inc
Datasheet
1.MT45W4MW16BBB-706_WT_TR.pdf
(61 pages)
Specifications of MT45W4MW16BFB-706 WT F
Format - Memory
RAM
Memory Type
PSRAM (Page)
Memory Size
64M (4M x 16)
Speed
70ns
Interface
Parallel
Voltage - Supply
1.7 V ~ 1.95 V
Operating Temperature
-30°C ~ 85°C
Package / Case
54-VFBGA
Lead Free Status / RoHS Status
Not Compliant
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Figure 12:
PDF: 09005aef80be1fbd/Source: 09005aef80be2036
Burst CellularRAM_2.fm - Rev. G 10/05 EN
DQ[15:0]
LB#/UB#
A[21:0]
ADV#
WAIT
WE#
OE#
CLK
CE#
V
V
V
V
V
V
V
V
V
V
V
V
V
V
V
V
V
V
IH
IL
IH
IL
IH
IL
IH
IL
IH
IL
IH
IL
IH
IL
OH
OL
OH
OL
Refresh Collision During WRITE Operation
Additional WAIT states inserted to allow refresh completion.
High-Z
ADDRESS
VALID
Note:
Non-default BCR settings for refresh collision during WRITE operation: Latency code two
(three clocks); WAIT active LOW; WAIT asserted during delay.
64Mb: 4 Meg x 16 Async/Page/Burst CellularRAM 1.0 Memory
15
D[0]
Micron Technology, Inc., reserves the right to change products or specifications without notice.
D[1]
D[2]
Bus Operating Modes
©2003 Micron Technology, Inc. All rights reserved.
D[3]
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