SI9407AEY-T1-E3 Vishay, SI9407AEY-T1-E3 Datasheet - Page 4

• Manufacturer Part Number: SI9407AEY-T1-E3
• Description: P CH MOSFET
• Manufacturer: Vishay
• Type: Power MOSFETr

Specifications of SI9407AEY-T1-E3

• Number Of Elements: 1
• Polarity: P
• Channel Mode: Enhancement
• Drain-source On-res: 0.15Ohm
• Drain-source On-volt: 60V
• Gate-source Voltage (max): ±20V
• Drain Current (max): 3.5A
• Output Power (max): Not RequiredW
• Frequency (max): Not RequiredMHz
• Noise Figure: Not RequireddB
• Power Gain: Not RequireddB
• Drain Efficiency: Not Required%
• Operating Temp Range: -55C to 175C
• Operating Temperature Classification: Military
• Mounting: Surface Mount
• Pin Count: 8
• Package Type: SOIC N
• Power Dissipation: 3W
• Transistor Polarity: P Channel
• Continuous Drain Current Id: 3.5A
• Drain Source Voltage Vds: -60V
• On Resistance Rds(on): 150mohm
• Rds(on) Test Voltage Vgs: -4.5V
• Threshold Voltage Vgs Typ: -1V
• Power Dissipation Pd: 3W
• Configuration: Single Quad Drain Triple Source
• Resistance Drain-source Rds (on): 0.12 Ohms
• Drain-source Breakdown Voltage: - 60 V
• Gate-source Breakdown Voltage: +/- 20 V
• Continuous Drain Current: +/- 3.5 A
• Maximum Operating Temperature: + 175 C
• Mounting Style: SMD/SMT
• Package / Case: SOIC-8 Narrow
• Minimum Operating Temperature: - 55 C
• Lead Free Status / RoHS Status: Compliant
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant, Compliant

Si9407AEY
Vishay Siliconix
TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon
Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and
reliability data, see
www.vishay.com
4
0.01
- 0.2
- 0.4
0.1
0.8
0.6
0.4
0.2
0.0
30
10
2
1
0
10 -
- 50 - 25
0.0
0.05
0.02
4
www.vishay.com/ppg?70742.
0.2
0.1
Duty Cycle = 0.5
Source-Drain Diode Forward Voltage
0.2
V
0
SD
T
0.4
I
J
D
- Source-to-Drain Voltage (V)
Threshold Voltage
= 175 °C
T
Single Pulse
25
= 250 µA
J
- Temperature (°C)
0.6
10 -
50
3
75
0.8
Normalized Thermal Transient Impedance, Junction-to-Ambient
100
1.0
T
J
125
= 25 °C
1.2
150
10 -
2
Square Wave Pulse Duration (s)
175
1.4
10 -
1
0.20
0.15
0.10
0.05
0.00
50
40
30
20
10
0
0.01
0
On-Resistance vs. Gate-to-Source Voltage
2
V
GS
- Gate-to-Source Voltage (V)
0.1
Single Pulse Power
1
Notes:
1. Duty Cycle, D =
2. Per Unit Base = R
3. T
4. Surface Mounted
P
4
DM
JM
Time (s)
I
D
-
S09-1341-Rev. E, 13-Jul-09
T
= 3.5 A
t
A
1
Document Number: 70742
= P
t
2
6
DM
Z
1
thJA
thJA
t
t
1
2
(t)
10
= 50 °C/W
8
30
10
10