JANTX2N7236 International Rectifier, JANTX2N7236 Datasheet

JANTX2N7236

Manufacturer Part Number
JANTX2N7236
Description
Manufacturer
International Rectifier
Type
Power MOSFETr
Datasheet

Specifications of JANTX2N7236

Number Of Elements
1
Polarity
P
Channel Mode
Enhancement
Drain-source On-res
0.22Ohm
Drain-source On-volt
100V
Gate-source Voltage (max)
±20V
Drain Current (max)
18A
Output Power (max)
Not RequiredW
Frequency (max)
Not RequiredMHz
Noise Figure
Not RequireddB
Power Gain
Not RequireddB
Drain Efficiency
Not Required%
Operating Temp Range
-55C to 125C
Operating Temperature Classification
Military
Mounting
Through Hole
Pin Count
3 +Tab
Package Type
TO-254AA
Power Dissipation
125W
Lead Free Status / RoHS Status
Not Compliant

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
JANTX2N7236
Manufacturer:
TI
Quantity:
550
Part Number:
JANTX2N7236
Manufacturer:
IR
Quantity:
20 000
POWER MOSFET
THRU-HOLE (TO-254AA)
Product Summary
For footnotes refer to the last page
Absolute Maximum Ratings
HEXFET
Rectifier’s advanced line of power MOSFET transistors. The
efficient geometry design achieves very low on-state resis-
tance combined with high transconductance.
sistors also feature all of the well-established advantages
of MOSFETs, such as voltage control, very fast switching,
ease of paralleling and electrical parameter temperature
stability. They are well-suited for applications such as switch-
ing power supplies, motor controls, inverters, choppers,
audio amplifiers, high energy pulse circuits, and virtually
any application where high reliability is required. The
HEXFET
need for additional isolating material between the device
and the heatsink. This improves thermal efficiency and
reduces drain capacitance.
I D @ V GS = -10V, T C = 100°C Continuous Drain Current
I D @ V GS = -10V, T C = 25°C
www.irf.com
Part Number R
IRFM9140
P D @ T C = 25°C
®
transistor’s totally isolated package eliminates the
T STG
MOSFET technology is the key to International
dv/dt
V GS
E AR
E AS
I DM
I AR
T J
0.20Ω
DS(on)
-18A
I
D
Parameter
Continuous Drain Current
Pulsed Drain Current
Max. Power Dissipation
Linear Derating Factor
Gate-to-Source Voltage
Single Pulse Avalanche Energy
Avalanche Current
Repetitive Avalanche Energy
Peak Diode Recovery dv/dt
Operating Junction
Storage Temperature Range
Lead Temperature
Weight
HEXFET
tran-
REF:MIL-PRF-19500/595
HEXFET
300 ( 0.063 in.(1.6mm) from case for 10s)
Features:
n
n
n
n
n
n
Simple Drive Requirements
Ease of Paralleling
Hermetically Sealed
Electrically Isolated
Dynamic dv/dt Rating
Light-weight
®
MOSFET TECHNOLOGY
JANTXV2N7236
9.3 (typical)
-55 to 150
100V, P-CHANNEL
JANTX2N7236
12.5
-5.5
125
±20
500
-18
-11
-72
-18
1.0
TO-254AA
JANS2N7236
IRFM9140
PD - 90495G
Units
W/°C
V/ns
mJ
mJ
o
A
W
V
A
C
g
1
09/22/03

Related parts for JANTX2N7236

JANTX2N7236 Summary of contents

Page 1

... MOSFET TECHNOLOGY HEXFET tran- Features: n Simple Drive Requirements n Ease of Paralleling n Hermetically Sealed n Electrically Isolated n Dynamic dv/dt Rating n Light-weight 300 ( 0.063 in.(1.6mm) from case for 10s 90495G IRFM9140 JANTX2N7236 JANTXV2N7236 JANS2N7236 100V, P-CHANNEL TO-254AA Units -18 A -11 -72 125 W 1.0 W/°C ±20 V 500 mJ - ...

Page 2

... Forward Turn-On Time Thermal Resistance Parameter R thJC Junction-to-Case R thCS Case-to-sink R thJA Junction to Ambient Note: Corresponding Spice and Saber models are available on International Rectifier Website. For footnotes refer to the last page 25°C (Unless Otherwise Specified) Min Typ Max Units -100 — — ...

Page 3

Fig 1. Typical Output Characteristics Fig 3. Typical Transfer Characteristics www.irf.com Fig 2. Typical Output Characteristics Fig 4. Normalized On-Resistance Vs. Temperature IRFM9140 3 ...

Page 4

IRFM9140 Fig 5. Typical Capacitance Vs. Drain-to-Source Voltage Fig 7. Typical Source-Drain Diode Forward Voltage 4 Fig 6. Typical Gate Charge Vs. Gate-to-Source Voltage Fig 8. Maximum Safe Operating Area www.irf.com 13a & b ...

Page 5

Fig 9. Maximum Drain Current Vs. Case Temperature Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Case www.irf.com IRFM9140 D.U. Pulse Width ≤ 1 µs Duty Factor ≤ 0.1 % Fig ...

Page 6

IRFM9140 Ω Fig 12a. Unclamped Inductive Test Circuit Fig 12b. Unclamped Inductive ...

Page 7

Foot Notes: Repetitive Rating; Pulse width limited by maximum junction temperature =-25V, starting 25° 3.1mH Peak -18A -10V Case Outline and Dimensions — TO-254AA 6.60 [.260] 13.84 ...

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