2SK373YTPE2F Toshiba, 2SK373YTPE2F Datasheet
2SK373YTPE2F
Manufacturer Part Number
2SK373YTPE2F
Description
Manufacturer
Toshiba
Datasheet
1.2SK373YTPE2F.pdf
(4 pages)
Specifications of 2SK373YTPE2F
Channel Type
N
Configuration
Single
Operating Temperature (min)
-55C
Operating Temperature (max)
125C
Operating Temperature Classification
Military
Mounting
Through Hole
Pin Count
3
Package Type
TO-92
Lead Free Status / RoHS Status
Compliant
For Audio, High Voltage Amplifier and Constant Current
Applications
•
•
Absolute Maximum Ratings
Electrical Characteristics
High breakdown voltage: V
High input impedance: I
Gate-drain voltage
Gate current
Drain power dissipation
Junction temperature
Storage temperature range
Note:
Gate cut-off current
Gate-drain breakdown voltage
Drain current
Gate-source cut-off voltage
Forward transfer admittance
Input capacitance
Reverse transfer capacitance
Noise figure
Note: I
DSS
Using continuously under heavy loads (e.g. the application of
high temperature/current/voltage and the significant change in
temperature, etc.) may cause this product to decrease in the
reliability significantly even if the operating conditions (i.e.
operating temperature/current/voltage, etc.) are within the
absolute maximum ratings.
Please design the appropriate reliability upon reviewing the
Toshiba Semiconductor Reliability Handbook (“Handling
Precautions”/“Derating Concept and Methods”) and individual
reliability data (i.e. reliability test report and estimated failure
rate, etc).
Characteristics
Characteristics
classification O: 0.6~1.4 mA, Y: 1.2~3.0 mA, GR: 2.6~6.5 mA
TOSHIBA Field Effect Transistor Silicon N Channel Junction Type
GSS
GDS
= −1.0 nA (max) (V
(Ta = 25°C)
= −100 V (min)
(Ta = 25°C)
V
V
Symbol
Symbol
GS (OFF)
(BR) GDS
V
⎪Y
I
I
C
T
C
GSS
DSS
P
NF
GDS
I
T
stg
rss
G
iss
fs
D
j
(Note)
⎪
2SK373
V
V
V
V
V
V
V
V
f = 100 Hz
GS
GS
DS
DS
DS
DS
DS
DG
DS
−55~125
= −80 V)
Rating
= 0, I
= 10 V, V
= 10 V, I
= 10 V, V
= 10 V, V
= 10 V, V
= −80 V, V
= 10 V, I
−100
400
125
10
1
G
= −100 μA
Test Condition
D
D
GS
GS
GS
GS
= 0.1 μA
DS
= 0, f = 1 MHz
= 0
= 0, f = 1 kHz
= 0, f = 1 MHz
= 0, R
= 0
Unit
mW
mA
°C
°C
V
G
= 100 kΩ,
Weight: 0.21 g (typ.)
JEDEC
JEITA
TOSHIBA
−100
−0.4
Min
0.6
1.5
⎯
⎯
⎯
⎯
Typ.
4.6
0.5
13
⎯
⎯
⎯
⎯
3
2-5F1C
TO-92
SC-43
2007-11-01
−1.0
−3.5
Max
6.5
⎯
⎯
⎯
⎯
⎯
2SK373
Unit: mm
Unit
mA
mS
nA
pF
pF
dB
V
V
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2SK373YTPE2F Summary of contents
Page 1
... TOSHIBA Field Effect Transistor Silicon N Channel Junction Type For Audio, High Voltage Amplifier and Constant Current Applications • High breakdown voltage: V GDS • High input impedance −1.0 nA (max) (V GSS Absolute Maximum Ratings Characteristics Gate-drain voltage Gate current Drain power dissipation Junction temperature ...
Page 2
2 2SK373 2007-11-01 ...
Page 3
3 2SK373 2007-11-01 ...
Page 4
... The information contained herein is presented only as a guide for the applications of our products. No responsibility is assumed by TOSHIBA for any infringements of patents or other rights of the third parties which may result from its use. No license is granted by implication or otherwise under any patents or other rights of TOSHIBA or the third parties. • ...