2N3819G ON Semiconductor, 2N3819G Datasheet
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2N3819G
Specifications of 2N3819G
Related parts for 2N3819G
2N3819G Summary of contents
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N–Channel – Depletion MAXIMUM RATINGS Rating Drain–Source Voltage Drain–Gate Voltage Gate–Source Voltage Drain Current Forward Gate Current Total Device Dissipation @ Derate above 25 C Storage Channel Temperature Range Semiconductor Components Industries, LLC, 2002 March, ...
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ELECTRICAL CHARACTERISTICS Characteristic OFF CHARACTERISTICS Gate–Source Breakdown Voltage (I = 1.0 Adc Gate–Source ( Vdc 200 Adc Gate–Source Cutoff Voltage ( Vdc nAdc) DS ...
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COMMON SOURCE CHARACTERISTICS ADMITTANCE PARAMETERS (V DS Figure 1. Input Admittance ( Figure 3. Forward Transadmittance (y 2N3819 = 15 Vdc channel Figure 2. Reverse Transfer Admittance (y ) Figure 4. Output Admittance (y ...
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COMMON SOURCE CHARACTERISTICS S–PARAMETERS ( Vdc channel Figure 5. S 11s Figure 7. S 21s http://onsemi.com = 25 C, Data Points in MHz) Figure 6. S Figure 12s 22s ...
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COMMON GATE CHARACTERISTICS ADMITTANCE PARAMETERS (V Figure 9. Input Admittance (y Figure 11. Forward Transfer Admittance (y 2N3819 = 15 Vdc channel ) Figure 10. Reverse Transfer Admittance ( Figure 12. Output Admittance ...
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COMMON GATE CHARACTERISTICS S–PARAMETERS ( Vdc channel Figure 13. S 11g Figure 15. S 21g http://onsemi.com = 25 C, Data Points in MHz) Figure 14. S Figure 16 12g 22g ...
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PACKAGE DIMENSIONS SECTION X– 2N3819 TO–92 (TO–226) CASE 29–11 ISSUE http://onsemi.com 7 ...
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... N. American Technical Support: 800–282–9855 Toll Free USA/Canada 2N3819 is a registered trademark of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right JAPAN: ON Semiconductor, Japan Customer Focus Center 4–32–1 Nishi–Gotanda, Shinagawa–ku, Tokyo, Japan 141–0031 Phone: 81–3–5740–2700 Email: r14525@onsemi ...